Takuo Sugano

Toyo University — Japan

Engineering · Physical Sciences

26h-index2.4kcitations214works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(78), Semiconductor Quantum Structures and Devices(59), Quantum and electron transport phenomena(48), Advancements in Semiconductor Devices and Circuit Design(45), Silicon Nanostructures and Photoluminescence(27)

Publications214 total

Improvement of electrical characteristics of local BOX MOSFETs by heavily doped structures and elucidation of the related mechanism
Journal of Computational Electronics·2013
Corrections to “Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip Applications” [Jan 13 260-267]
IEEE Transactions on Electron Devices·2013· 3 citedOpen Access
Quantitative Extraction of Electric Flux in the Buried-Oxide Layer and Investigation of Its Effects on MOSFET Characteristics
IEEE Transactions on Electron Devices·2013· 8 cited
Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip Applications
IEEE Transactions on Electron Devices·2012· 28 cited
固体エレクトロニクスの研究と教育 (前編)
Denshi Jouhou Tsuushin Gakkai Tsuushin Sosaieti magajin/B-plus/Denshi Jouhou Tsuushin Gakkai Tsuushin Sosaeti magajin·2012Open Access
Local-Stress-Induced Trap States in SOI Layers With Different Levels of Roughness at SOI/BOX Interfaces
IEEE Electron Device Letters·2011· 4 cited
In-depth profiling of electron trap states in silicon-on-insulator layers and local mechanical stress near the silicon-on-insulator/buried oxide interface in separation-by-implanted-oxygen wafers
Journal of Applied Physics·2010· 4 cited
Photoluminescence and Optical Transition Dynamics of Er3+ Ions in Porous Si
Journal of Material Science and Technology·2009· 1 cited
Suppression of DIBL in deca-nano SOI MOSFETs by controlling permittivity and thickness of BOX layers
2009· 16 cited
Discussion of origins of high-density trap states in SIMOX wafers
2009
Drive Current Enhancement in Silicon-on-Quartz MOSFETs
IEEE Electron Device Letters·2008· 2 cited
Characterization of Distribution of Trap States in Silicon-on-Insulator Layers by Front-Gate Characteristics in n-Channel SOI MOSFETs
IEEE Transactions on Electron Devices·2008· 19 cited
In Remembrance of the late Professor Masao Maeda
Hyomen Kagaku·2005Open Access
Erratum to "A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs" [Thin Solid Films 462–463 (2004) 6–10]
Thin Solid Films·2004
A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs
Thin Solid Films·2004· 4 cited
Characterization of Trap States at Silicon-On-Insulator (SOI)/Buried Oxide (BOX) Interface by Back Gate Transconductance Characteristics in SOI MOSFETs
Japanese Journal of Applied Physics·2003· 24 cited
Characterization of traps in SOI wafers by transconductance characteristics of MOSFETs
APS March Meeting Abstracts·2003
Coupling effects on the conductance fluctuations in GaAs/AlGaAs double quantum dots
Microelectronic Engineering·2002· 1 cited
Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays
Japanese Journal of Applied Physics·2001· 1 cited
Suppression of the Little–Parks oscillation in a mesoscopic superconducting ring
Physica B Condensed Matter·2000· 6 cited
page 1 of 11Next →

Frequent Co-authors

Yoshinobu Aoyagi(17), Xinwei Zhao(11), Hideo Isshiki(5), Tatsuro Hanajiri(5), Olaf Schoenfeld(4), Shuji Komuro(4), Shintaro Nomura(4), Yoshikata Nakajima(4), Kimiyoshi Yamasaki(3), Yoshinobu Aoyagi Yoshinobu Aoyagi(3), Toshiaki Iitaka(3), Takashi Meguro(3), Toru Toyabe(3), Minoru Yoshida(2), Hideki Hirayama(2), Jun‐ichi Kusano(2), Koitiro Hoh(2), F. Koshiga(2), Sohachi Iwai(2), Tetsuya Iizuka(2)