Toru Toyabe

Toyo University — Japan

Engineering · Physical Sciences

12h-index385citations53works1.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Advancements in Semiconductor Devices and Circuit Design(37), Semiconductor materials and devices(32), Thin-Film Transistor Technologies(15), Organic Electronics and Photovoltaics(14), Integrated Circuits and Semiconductor Failure Analysis(12)

Publications53 total

Breakdown Characteristics of GaN DMISFETs Fabricated via Mg, Si and N Triple Ion Implantation
Micromachines·2024· 1 citedOpen Access
Device Simulation Analysis on Contact Modification Effects in Organic Thin-Film Transistors
2021
Fully ion implanted normally-off GaN DMOSFETs-2
The Japan Society of Applied Physics·2019
Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics
Materials·2019· 24 citedOpen Access
Experimental and Numerical Investigation of Contact Doping Effects in Dinaphthothienothiphene Thin‐Film Transistors
Electronics and Communications in Japan·2017· 3 cited
Experimental and Numerical Investigation of Contact Doping Effects in Dinaphthothienothiophene Thin-Film Transistors
IEEJ Transactions on Electronics Information and Systems·2016
Device Simulation Analysis of Contact Modification in Organic Thin-Film Transistors
IEICE Technical Report; IEICE Tech. Rep.·2016
Experimental and Numerical Investigation on Influences of Contact Doping in DNTT Transistors
The Japan Society of Applied Physics·2016
Experimental and numerical analysis of channel-length-dependent electrical properties in bottom-gate, bottom-contact organic thin-film transistors with Schottky contact
Organic Electronics·2014· 11 cited
Modeling of Drain Electric Flux Passing Through the BOX Layer in SoI MOSFETs—Part II: Model Derivation and Validity Confirmation
IEEE Transactions on Electron Devices·2014· 2 cited
Modeling of Drain Electric Flux Passing Through the BOX Layer in SoI MOSFETs—Part I: Preparation for Modeling Based on Conformal Mapping
IEEE Transactions on Electron Devices·2014· 2 cited
Experimental and numerical investigation of contact-area-limited doping for top-contact pentacene thin-film transistors with Schottky contact
Physical Chemistry Chemical Physics·2014· 8 cited
Numerical investigation of organic thin-film transistors using a thermionic field emission model
Japanese Journal of Applied Physics·2014· 13 cited
Intrinsic difference in Schottky barrier effect for device configuration of organic thin-film transistors
Organic Electronics·2014· 18 cited
Improvement of electrical characteristics of local BOX MOSFETs by heavily doped structures and elucidation of the related mechanism
Journal of Computational Electronics·2013
Quantitative Extraction of Electric Flux in the Buried-Oxide Layer and Investigation of Its Effects on MOSFET Characteristics
IEEE Transactions on Electron Devices·2013· 8 cited
Current Enhancement with Contact-Area-Limited Doping for Bottom-Gate, Bottom-Contact Organic Thin-Film Transistors
Japanese Journal of Applied Physics·2013· 11 cited
Molecular doping effect in bottom-gate, bottom-contact pentacene thin-film transistors
Journal of Applied Physics·2011· 27 cited
A Proposal of High Performance and Highly Fabricable Complementary Organic Thin Film Transistor Structure
Japanese Journal of Applied Physics·2011· 3 cited
A Proposal of High Performance and Highly Fabricable Complementary Organic Thin Film Transistor Structure
Japanese Journal of Applied Physics·2011· 3 cited
page 1 of 3Next →

Frequent Co-authors

Yasuo Wada(15), Tatsuro Hanajiri(12), Kei Noda(10), Yoshikata Nakajima(10), Takuo Sugano(10), Shōjirō Asai(6), Yoshinori Ishikawa(5), Eiji Takeda(5), H. Kodera(4), Tatsuya Yamada(4), Hideki Tomita(3), Kenichi Aoto(3), Takitaro Morikawa(3), Tohru Nakamura(3), Hitoshi Kume(3), Ken Yamaguchi(3), R. Yamamoto(3), Yusuke Wakatsuki(2), Kazumi Matsushige(2), Michitaka Yoshino(2)