Kenichi Aoto

Toyo University — Japan

Engineering · Physical Sciences

3h-index47citations8works0.02yr avg
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Research Topics

Semiconductor materials and devices(8), Advancements in Semiconductor Devices and Circuit Design(8), Integrated Circuits and Semiconductor Failure Analysis(5), Silicon Carbide Semiconductor Technologies(1), Silicon and Solar Cell Technologies(1)

Publications8 total

Erratum to "A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs" [Thin Solid Films 462–463 (2004) 6–10]
Thin Solid Films·2004
A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs
Thin Solid Films·2004· 4 cited
Breakdown of a simple scaling rule of SOI MOSFETs and its prolong by thinning BOX
2004· 2 cited
Scaling rules for SOI MOSFETs operating in the fully inverted mode
Solid-State Electronics·2004· 14 cited
An approach for quantum mechanical modeling and simulation for MOS devices, covering the whole operation region
Computational Materials Science·2004· 3 cited
Characterization of Trap States at Silicon-On-Insulator (SOI)/Buried Oxide (BOX) Interface by Back Gate Transconductance Characteristics in SOI MOSFETs
Japanese Journal of Applied Physics·2003· 24 cited
Characterization of traps in SOI wafers by transconductance characteristics of MOSFETs
APS March Meeting Abstracts·2003
Characterization of traps at SOI/BOX interface by back gate transconductance characteristics in SOI MOSFETs
2002

Frequent Co-authors

Yoshikata Nakajima(8), Tatsuro Hanajiri(8), Hideki Tomita(5), Toru Toyabe(4), Takitaro Morikawa(4), Takuo Sugano(4), T. Toyabe(4), T. Morikawa(4), T. Sugano(4), M. Niizato(3), Nobuhiro Ito(2), Kenji Sasaki(2), Tomohiro Hoshino(1), Yuya Akagi(1)