Takitaro Morikawa

Toyo University — Japan

Engineering · Physical Sciences

16h-index1.0kcitations52works0.02yr avg
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Research Topics

Semiconductor materials and devices(17), Silicon Nanostructures and Photoluminescence(15), Luminescence Properties of Advanced Materials(9), Gas Sensing Nanomaterials and Sensors(7), Nanowire Synthesis and Applications(6)

Publications52 total

Temperature Dependence of Photoluminescence from Rice for Non-Destructive Quality Control
2006 SICE-ICASE International Joint Conference·2006· 1 cited
Two dimensional temperature measurements by X-Y scanning of Er end doped silica fiber sensor
2006 SICE-ICASE International Joint Conference·2006
Thermo-Sensor Based on Peak Intensity Ratio of Photoluminescence from Cr Doped YAG Crystals
2006 SICE-ICASE International Joint Conference·2006· 11 cited
Fluorescence thermo-meter application of Eu doped Y2SiO5 crystal
2006 SICE-ICASE International Joint Conference·2006· 1 cited
Temperature measurement system based on the phase shift of fluorescence response
2006 SICE-ICASE International Joint Conference·2006· 1 cited
Fluorescence Thermometer Application of Cr Doped Spinel Crystals
2006 SICE-ICASE International Joint Conference·2006· 3 cited
Fiber-optic thermometer application of Eu end doped silica fiber Sensor
2006 SICE-ICASE International Joint Conference·2006
Growth and evaluation of the Tb doped YAlO3 crystals for the fiber-optic thermometer application
2006 SICE-ICASE International Joint Conference·2006
Fiber-optic thermometer for high temperature measurement
2006 SICE-ICASE International Joint Conference·2006· 1 cited
Temperature measurement using phosphor sheet
Proceedings of the Japan Joint Automatic Control Conference·2005
Erratum to "A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs" [Thin Solid Films 462–463 (2004) 6–10]
Thin Solid Films·2004
A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs
Thin Solid Films·2004· 4 cited
Study on atomic coordination around Er doped into anatase– and rutile– TiO2: Er–O clustering dependent on the host crystal phase
Journal of Applied Physics·2003· 42 cited
Characterization of Trap States at Silicon-On-Insulator (SOI)/Buried Oxide (BOX) Interface by Back Gate Transconductance Characteristics in SOI MOSFETs
Japanese Journal of Applied Physics·2003· 24 cited
Characterization of traps in SOI wafers by transconductance characteristics of MOSFETs
APS March Meeting Abstracts·2003
The Fiber-Optic Thermometer Using Fluorescence Lifetime of the Spinel Crystal
Transactions of the Society of Instrument and Control Engineers·2003Open Access
Evaluation of the Fiber-Optic Thermometer Using Fluorescent Lifetime of Ruby
IEEJ Transactions on Sensors and Micromachines·2003Open Access
Change in photoluminescence from Er-doped TiO2 thin films induced by optically assisted reduction
Applied Physics Letters·2002· 56 cited
Local structure analysis of an optically active center in Er-doped ZnO thin film
Journal of Applied Physics·2001· 124 cited
Site-selective x-ray absorption fine structure analysis of an optically active center in Er-doped semiconductor thin film using x-ray-excited optical luminescence
Applied Physics Letters·2001· 29 cited
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Frequent Co-authors

Shuji Komuro(38), Yoshinobu Aoyagi(20), Tooru Katsumata(14), Patrick O’Keeffe(13), Hiroaki Aizawa(10), Masashi Ishii(7), Shoji Den(7), Xinwei Zhao(5), Hideki Kokai(5), Hideo Isshiki(4), Takashi Kato(4), Yoshikata Nakajima(4), Hideki Tomita(4), Kenichi Aoto(4), Tatsuro Hanajiri(4), Toru Toyabe(4), Takuo Sugano(4), Kunihiro Kashiwagi(4), Yūichi Sakamoto(4), Yoichi Murayama(4)