Z. Liliental‐Weber

Lawrence Berkeley National Laboratory — United States

Physics and Astronomy · Physical Sciences

51h-index9.8kcitations469works0.52yr avg
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Research Topics

GaN-based semiconductor devices and materials(279), Semiconductor materials and devices(175), Semiconductor Quantum Structures and Devices(137), Ga2O3 and related materials(117), Semiconductor materials and interfaces(113)

Publications469 total

Application of Transmission Electron Microscopy to Study Interfaces in Optoelectronic Materials
2024
Effects of structural defects on optical properties of InxGa1−xN layers and quantum wells
Journal of Applied Physics·2024· 1 citedOpen Access
Propagation of misfit dislocations from buffer/Si interface into Si
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2023Open Access
The influence of the substrate misorientation on the structural quality of GaN layers grown by HVPE
Journal of Crystal Growth·2018· 2 citedOpen Access
Defects in GaN: core structure of screw dislocations
2018
The importance of structural inhomogeneity in GaN thin films
Journal of Crystal Growth·2016· 5 citedOpen Access
Structural defects in GaN revealed by transmission electron microscopy
Japanese Journal of Applied Physics·2014· 27 citedOpen Access
Structural defects in bulk GaN
Journal of Crystal Growth·2014· 5 cited
Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2013· 21 cited
Local structure of amorphous GaN1−xAsx semiconductor alloys across the composition range
Journal of Applied Physics·2013· 6 cited
Direct atomic imaging of antiphase boundaries and orthotwins in orientation-patterned GaAs
Applied Physics Letters·2013· 2 cited
Molecular beam epitaxy of highly mismatched N-rich GaN1−xSbx and InN1−xAsx alloys
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2013· 12 citedOpen Access
Microstructure of Mg doped GaNAs alloys
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2012· 1 cited
Microstructure of GaN1−x Bi x
Journal of Electronic Materials·2012· 5 cited
Planar defects in patterned GaAs by aberration corrected STEM
Microscopy and Microanalysis·2012
Planar defects in thin films of InGaN
Microscopy and Microanalysis·2012· 1 cited
Structural studies of GaN<sub>1‐x</sub> As<sub>x</sub> and GaN<sub>1‐x</sub> Bi<sub>x</sub> alloys for solar cell applications
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2012· 2 cited
Wurtzite-to Amorphous-to Cubic Phase Transition of GaN&lt;sub&gt;1-X&lt;/sub&gt;As&lt;sub&gt;x&lt;/sub&gt; Alloys with Increasing as Content
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2012· 1 cited
Large Reaction Rate Enhancement in Formation of Ultrathin AuSi Eutectic Layers
Physical Review Letters·2012· 18 citedOpen Access
Local Structure of Amorphous GaNAs Alloys Across the Composition Range
Bulletin of the American Physical Society·2012
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Frequent Co-authors

J. Washburn(13), E. R. Weber(10), Jacek B. Jasiński(10), S. Ruvimov(9), K. M. Yu(6), Joel W. Ager(5), N. Newman(5), Mourad Benamara(5), F. W. Smith(4), W. E. Spicer(4), W. Walukiewicz(4), W. Swider(4), R. J. Molnar(4), I. Grzegory(4), C. Kisielowski(3), M. Kamińska(3), T. Kendelewicz(3), R. Cao(3), K. E. Miyano(3), I. Lindau(3)