W. Walukiewicz

Lawrence Berkeley National Laboratory — United States

Physics and Astronomy · Physical Sciences

70h-index21.3kcitations436works6.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(220), GaN-based semiconductor devices and materials(173), Semiconductor materials and devices(144), Semiconductor materials and interfaces(90), Ga2O3 and related materials(72)

Publications436 total

Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting
Journal of Applied Physics·2024· 6 citedOpen Access
Dilute Group III-V nitride intermediate band solar cells with contact blocking layers
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2023Open Access
Broad spectrum solar cell
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2023· 1 citedOpen Access
Single P-N junction tandem photovoltaic device
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2023Open Access
Multiband semiconductor compositions for photovoltaic devices
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2023Open Access
Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2023Open Access
Improvement of III-V dilute nitride thin films for solar cell application: Effect of antimony doping
International Journal of the Society of Materials Engineering for Resources·2022· 3 citedOpen Access
Annealing Induced Saturation in Electron Concentration for V-Doped CdO
Crystals·2021Open Access
Highly Mismatched Semiconductor Alloys: From Atoms to Devices
Journal of Applied Physics·2020· 30 cited
Growth of GaP1 − x − yAsyNx on Si substrates by chemical beam epitaxy
Journal of Applied Physics·2019· 7 citedOpen Access
Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys
Journal of Applied Physics·2019· 8 citedOpen Access
Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN
Journal of Applied Physics·2019· 6 citedOpen Access
Oxygen Concentration Dependence of Photovoltaic Properties of Intermediate Band Solar Cells based on Cl-doped ZnTeO
2019
ZnO1−xTex highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure
Journal of Applied Physics·2019· 18 citedOpen Access
Stoichiometry Controlled Bipolar Conductivity in Nanocrystalline <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Ni</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>Cd</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>+</mml:mo><mml:mi>δ</mml:mi></mml:mrow></mml:msub></mml:math> Thin Films
Physical Review Applied·2019· 26 citedOpen Access
Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers
Solar Energy Materials and Solar Cells·2018· 9 citedOpen Access
Carrier Dynamics in an Intermediate-Band Semiconductor by THz Transient Photoconductivity
Bulletin of the American Physical Society·2018
Reconfiguring crystal and electronic structures of MoS2 by substitutional doping
Nature Communications·2018· 198 citedOpen Access
Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloys
Scientific Reports·2017· 20 citedOpen Access
Multicolor emission from intermediate band semiconductor ZnO1−xSex
Scientific Reports·2017· 25 citedOpen Access
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Frequent Co-authors

K. M. Yu(24), Joel W. Ager(23), Junqiao Wu(18), E. E. Häller(16), W. Shan(14), W. J. Schaff(9), H. J. Lü(8), E. E. Haller(7), S. X. Li(6), John F. Geisz(5), Sarah Kurtz(5), J. K. Furdyna(4), H. C. Gatos(4), O. D. Dubón(4), J. M. Olson(4), Reese E. Jones(4), Daniel J. Friedman(3), Hai Lu(3), X. Liu(3), J. Łagowski(3)