O. D. Dubón

Berkeley College — United States

Physics and Astronomy · Physical Sciences

33h-index4.5kcitations220works1.42yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(62), ZnO doping and properties(49), Semiconductor materials and devices(40), Chalcogenide Semiconductor Thin Films(34), GaN-based semiconductor devices and materials(33)

Publications220 total

Large Elastic Anisotropy in Two-dimensional Layered GaS and GaSe Modulated by Copper Intercalation
Materials Data Repository·2026Open Access
Large elastic anisotropy in Brillouin scattering of copper-intercalated GaS and GaSe
Applied Physics Letters·2025
Tracking deep-level defects in degrading perovskite solar cells with a multifactorial approach
Organic Electronics·2024· 1 citedOpen Access
Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting
Journal of Applied Physics·2024· 6 citedOpen Access
Tracking Deep-Level Defects in Degrading Solar Cells with a Approach
SSRN Electronic Journal·2024Open Access
Vapor-liquid-solid growth of highly-mismatched semiconductor nanowires with high-fidelity van der Waals layer stacking
arXiv (Cornell University)·2022Open Access
Modulating Electron Beam–Sample Interactions in Imaging and Diffraction Modes by Dose Fractionation with Low Dose Rates
Microscopy and Microanalysis·2021· 14 citedOpen Access
Characterization of MoS<sub>2</sub> Nanorods by Electron Microscopy
Microscopy and Microanalysis·2021Open Access
Author Correction: Chemical trends of deep levels in van der Waals semiconductors
Nature Communications·2020· 1 citedOpen Access
Temperature-dependent growth of hexagonal and monoclinic gallium sulfide films by pulsed-laser deposition
AIP Advances·2020· 13 citedOpen Access
Amorphous gallium oxide sulfide: A highly mismatched alloy
Journal of Applied Physics·2019· 13 citedOpen Access
Ga1−x Mn x P Synthesized by Ion Implantation and Pulsed-Laser Melting
2019
Structure–Property Relationship of Low-Dimensional Layered GaSe<sub><i>x</i></sub>Te<sub>1–<i>x</i></sub> Alloys
Chemistry of Materials·2018· 21 cited
Electronic structure of the dilute magnetic semiconductor <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi mathvariant="normal">G</mml:mi><mml:msub><mml:mi mathvariant="normal">a</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi mathvariant="normal">M</mml:mi><mml:msub><mml:mi mathvariant="normal">n</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi mathvariant="normal">P</mml:mi></mml:mrow></mml:math> from hard x-ray photoelectron spectroscopy and angle-resolved photoemission
Physical review. B./Physical review. B·2018· 14 citedOpen Access
Carrier Dynamics in an Intermediate-Band Semiconductor by THz Transient Photoconductivity
Bulletin of the American Physical Society·2018
Effects of Ni <i>d</i>-levels on the electronic band structure of NixCd1-xO semiconducting alloys
Journal of Applied Physics·2017· 11 citedOpen Access
(Invited) GaN-Based Device Reliability Investigations through Advanced TEM Techniques
ECS Meeting Abstracts·2017
Carrier Lifetimes in a GaPAsN Intermediate Band Semiconductor
Bulletin of the American Physical Society·2017
Long‐Term Structural Evolution of an Intercalated Layered Semiconductor
Advanced Functional Materials·2017· 9 citedOpen Access
Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air
Advanced Materials·2016· 72 citedOpen Access
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Frequent Co-authors

K. M. Yu(31), W. Walukiewicz(19), Michael A. Scarpulla(14), Junqiao Wu(9), Peter Stone(8), Jeffrey W. Beeman(7), E. E. Häller(6), Kirstin Alberi(5), Rouin Farshchi(5), Douglas Detert(5), Władek Walukiewicz(5), Kevin F. McCarty(4), N. C. Bartelt(4), L. A. Reichertz(4), X. Liu(3), Joseph M. Wofford(3), Shu Nie(3), W. Shan(3), P. Becla(3), Manoj R. Pillai(3)