Michael A. Scarpulla

University of Utah — United States

Engineering · Physical Sciences

33h-index4.4kcitations251works4.22yr avg
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Research Topics

Chalcogenide Semiconductor Thin Films(96), Quantum Dots Synthesis And Properties(79), ZnO doping and properties(53), Ga2O3 and related materials(47), Advanced Semiconductor Detectors and Materials(36)

Publications251 total

High thermal conductivity of rutile-GeO2 film by metal-organic chemical vapor deposition: 52.9 W m−1 K−1
Applied Physics Letters·2026
Phase Competition and Rutile Phase Stabilization of Growing GeO <sub>2</sub> Films by MOCVD
ACS Applied Electronic Materials·2026
In situ Study of p-NiO Film Quality at High Temperatures up to 1100 deg C
arXiv (Cornell University)·2025Open Access
High thermal conductivity of rutile-GeO$_2$ films grown by MOCVD: $52.9~\mathrm{W\,m^{-1}\,K^{-1}}$
arXiv (Cornell University)·2025Open Access
Diffusion of acceptor dopants in monoclinic <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mi>Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>
Physical Review Materials·2025· 1 cited
Degradation of 2.4-kV Ga₂O₃ Schottky Barrier Diode at High Temperatures Up to 500°C
IEEE Transactions on Electron Devices·2025· 2 cited
Comparing CV and DLCP Techniques in CIGS Solar Cells Through Self-Consistent Numerical Simulations
2025
Relating Surface Photovoltage to IQE for Contactless In-Situ IQE Monitoring
2025
Low‐Loss Parowax‐Imprinted Diffractive Neural Network for Orbital Angular Momentum Terahertz Holographic Imaging
Advanced Photonics Research·2025· 7 citedOpen Access
Quantitative Modeling of Point Defects in $β$-Ga2O3 Combining Hybrid Functional Energetics with Semiconductor and Processes Thermodynamics
arXiv (Cornell University)·2025Open Access
Unraveling the transformation pathway of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>β</mml:mi></mml:math> to <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>γ</mml:mi></mml:math> phase transition in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> from atomistic simulations
Physical Review Materials·2025· 5 cited
Quantitative modeling of point defects in β-Ga<sub>2</sub>O<sub>3</sub> combining hybrid functional energetics with semiconductor and processes thermodynamics
Physical Chemistry Chemical Physics·2025· 8 citedOpen Access
Epitaxial growth of rutile GeO2 via MOCVD
Applied Physics Letters·2024· 26 cited
Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in <i>β</i>-Ga2O3
APL Materials·2024· 4 citedOpen Access
Quantification of the strong, phonon-induced Urbach tails in β-Ga2O3 and their implications on electrical breakdown
Journal of Applied Physics·2024· 6 citedOpen Access
Epitaxial Growth of Rutile GeO$_2$ via MOCVD
arXiv (Cornell University)·2024Open Access
Growth of GeO<sub>2</sub> on <i>R</i>-Plane and <i>C</i>-Plane Sapphires by MOCVD
ACS Applied Engineering Materials·2024· 23 cited
Growth of GeO2 on R-plane and C-plane Sapphires by MOCVD
arXiv (Cornell University)·2024Open Access
Investigation of Ga interstitial and vacancy diffusion in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mi>Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> via split defects: A direct approach via master diffusion equations
Physical Review Materials·2024· 7 cited
Quantification of the strong, phonon-induced Urbach tails in \b{eta}-Ga2O3 and their implications on electrical breakdown
arXiv (Cornell University)·2024Open Access
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Frequent Co-authors

O. D. Dubón(13), K. M. Yu(12), W. Walukiewicz(8), Akira Nagaoka(6), Junqiao Wu(5), Sriram Krishnamoorthy(5), Michael J. Aziz(4), Berardi Sensale‐Rodriguez(4), Praneeth Ranga(4), W. Shan(3), Jeffrey W. Beeman(3), P. Becla(3), Kenji Yoshino(3), Steve Blair(3), Rouin Farshchi(3), Manoj R. Pillai(3), A. C. Gossard(3), Evan Benoit(3), Samuel Kingston(3), Joel B. Harley(3)