A. C. Gossard

University of Michigan–Ann Arbor — United States

Physics and Astronomy · Physical Sciences

137h-index76.4kcitations1.4kworks0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(822), Quantum and electron transport phenomena(520), Photonic and Optical Devices(237), Semiconductor Lasers and Optical Devices(201), Semiconductor materials and devices(179)

Publications1.4k total

Differentiating Diversions and Drought to Understand Drivers of Water Loss from a North American Terminal Lake
Journal of Water Resources Planning and Management·2025
Bias-Dependent Carrier Dynamics and Terahertz Performance of ErAs:In(Al)GaAs Photoconductors
IEEE Transactions on Terahertz Science and Technology·2022· 19 cited
1.3 µm High Speed Heterogeneous Quantum-Dot Lasers on Si
Conference on Lasers and Electro-Optics·2022
1.3 μm High Performance Regrown Distributed Feedback Lasers Epitaxially Grown on Si
2021· 1 cited
Quantum Dot Lasers: High Speed Evanescent Quantum‐Dot Lasers on Si (Laser Photonics Rev. 15(8)/2021)
Laser & Photonics Review·2021· 8 cited
Isotropic and Anisotropic <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>g</mml:mi></mml:mrow></mml:math>-Factor Corrections in GaAs Quantum Dots
Physical Review Letters·2021· 5 citedOpen Access
Signature of Many-Body Localization of Phonons in Strongly Disordered Superlattices
Nano Letters·2021· 6 citedOpen Access
High Speed Evanescent Quantum‐Dot Lasers on Si
Laser & Photonics Review·2021· 101 citedOpen Access
High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters
Optica·2021· 131 citedOpen Access
Artificial coherent states of light from a single photon stream
Bulletin of the American Physical Society·2021
Dipolar Attraction and Repulsion Between Indirect Excitons
Bulletin of the American Physical Society·2021
Moiré pattern of interference dislocations in condensate of indirect excitons
Nature Communications·2021· 28 citedOpen Access
Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2021· 8 citedOpen Access
Attractive and repulsive dipolar interaction in bilayers of indirect excitons
Physical review. B./Physical review. B·2021· 15 citedOpen Access
High temperature reliable epitaxially grown quantum dot lasers on (001) Si with record performance
Conference on Lasers and Electro-Optics·2021· 1 cited
1.3 μm regrown quantum-dot distributed feedback lasers on (001) Si: a pathway to scale towards 1 Tbit/s
Conference on Lasers and Electro-Optics·2021· 1 cited
Moiré Pattern of Interference Dislocations and Superfluidity in Condensate of Indirect Excitons
Conference on Lasers and Electro-Optics·2021
Dipolar interactions in bilayers of indirect excitons
Conference on Lasers and Electro-Optics·2021
Isotropic and Anisotropic g-Factor Corrections in GaAs Quantum Dots
2020· 1 citedOpen Access
Isotropic and Anisotropic g-Factor Corrections in GaAs Quantum Dots
Zenodo (CERN European Organization for Nuclear Research)·2020Open Access
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Frequent Co-authors

W. Wiegmann(15), H. L. Störmer(7), D. S. Chemla(7), D. D. Awschalom(6), Yuichiro K. Kato(5), Roberto C. Myers(5), David A. B. Miller(5), R. Dingle(5), Joshua M. O. Zide(4), Robert C. Miller(4), L. V. Butov(4), T. C. Damen(3), D. A. Kleinman(3), P. M. Petroff(3), K. L. Campman(3), D. C. Tsui(2), Hou‐Tong Chen(2), Willie J. Padilla(2), Richard D. Averitt(2), Thomas H. Wood(2)