D. C. Tsui

Princeton University — United States

Physics and Astronomy · Physical Sciences

40h-index10.4kcitations185works0.02yr avg
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Research Topics

Quantum and electron transport phenomena(104), Semiconductor Quantum Structures and Devices(69), Advancements in Semiconductor Devices and Circuit Design(49), Semiconductor materials and devices(39), Physics of Superconductivity and Magnetism(38)

Publications185 total

Particle-Hole Symmetry and the Fractional Quantum Hall Effect in the Lowest Landau Level
Physical Review Letters·2020· 20 citedOpen Access
Anti-levitation of Landau levels in vanishing magnetic fields
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2017Open Access
National High Magnetic Field Laboratory 2016 Annual Research Report: Termination of Two-Dimensional Metallic Conduction near the Metal-Insulator Transition in Si/SiGe Quantum Wells
2016Open Access
Emergence of Dirac Composite Fermions at the Half-Filled Landau Level of the Fractional Quantum Hall Effect.
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2016Open Access
Competing Quantum Hall Phases in the Second Landau Level in Low Density Limit
2015· 4 citedOpen Access
Pinning modes of high-magnetic-field Wigner solids with controlled alloy disorder
Physical Review B·2014· 9 citedOpen Access
Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
Applied Physics Letters·2011· 32 cited
Integration of complementary circuits and two-dimensional electron gas in a Si/SiGe heterostructure
Applied Physics Letters·2010· 3 citedOpen Access
Density dependence of the 5/2 energy gap
Bulletin of the American Physical Society·2010
Magnetoresistance of two-dimensional electrons in Si/SiGe quantum wells in in-plane magnet field at 20 mK
Bulletin of the American Physical Society·2009
Anisotropic Modification of the Effective Hole<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>g</mml:mi></mml:math>Factor by Electrostatic Confinement
Physical Review Letters·2008· 28 citedOpen Access
In-plane field induced anisotropy in the microwave/rf resonances of 2D electrons at the second excited Landau level
Bulletin of the American Physical Society·2008
Electronic Transport Studies in Thin GaAs/AlGaAs Quantum Wells
Bulletin of the American Physical Society·2007
RF resonance of two dimensional electron systems in higher Landau levels: Effect of in-plane magnetic fields
Bulletin of the American Physical Society·2007
Short-range disorder induced RIQHE in the lowest Landau level
Bulletin of the American Physical Society·2007
Astability and Negative Differential Resistance of the Wigner Solid
Physical Review Letters·2007· 24 cited
Density and well width dependences of the effective mass of two-dimensional holes in (100) GaAs quantum wells measured using cyclotron resonance at microwave frequencies
Solid State Communications·2006· 36 citedOpen Access
SiGe quantum dot single-hole transistor fabricated by atomic force microscope nanolithography and silicon epitaxial-regrowth
Journal of Applied Physics·2006· 3 cited
Interaction effects in the transport of two-dimensional holes in GaAs
arXiv (Cornell University)·2006· 1 citedOpen Access
Modulation of two-dimensional electrons in Si/SiGe heterostructures using atomic-layer-deposited gate dielectric
Bulletin of the American Physical Society·2006
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Frequent Co-authors

H. L. Störmer(7), A. C. Gossard(6), S. J. Allen(5), V. J. Goldman(4), A. Zaslavsky(4), M. Shayegan(4), L. N. Pfeiffer(4), K. W. West(4), J. E. Cunningham(3), D. J. Bishop(3), R. C. Dynes(3), M. B. Santos(3), James C. M. Hwang(2), M. A. Paalanen(2), Yuan P. Li(2), M. Grayson(2), Michael Hilke(2), Hwayong Noh(2), J. A. Simmons(2), R. W. Stark(2)