Sriram Krishnamoorthy

University of California, Santa Barbara — United States

Computer Science · Physical Sciences

56h-index10.4kcitations506works4.42yr avg
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Research Topics

Parallel Computing and Optimization Techniques(152), Ga2O3 and related materials(127), Methane Hydrates and Related Phenomena(89), ZnO doping and properties(87), Distributed and Parallel Computing Systems(70)

Publications506 total

Multi-Fin <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Vertical FinFET With Interfin Field Oxide Exhibiting a Breakdown Voltage of 1.8 kV and Power Figure of Merit of 1 GW/cm <sup>2</sup>
IEEE Electron Device Letters·2025
2.34 kV β-Ga2O3 vertical trench RESURF Schottky barrier diode with sub-micron fin width
APL Electronic Devices·2025Open Access
Cr2O3/\b{eta}-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
arXiv (Cornell University)·2025Open Access
<i>(Invited)</i> Novel Superheterojunctions for Ultra-Low Resistance Ga <sub>2</sub> O <sub>3</sub> and GaN Power Switches
ECS Meeting Abstracts·2025
Kilovolt-class β-Ga2O3 field-plated Schottky barrier diodes with MOCVD-grown intentionally 1015 cm−3 doped drift layers
Journal of Applied Physics·2025Open Access
Control of Extraordinary Optical Transmission in Resonant Terahertz Gratings via Lateral Depletion in an AlGaN-GaN Heterostructure
arXiv (Cornell University)·2025Open Access
QuaRTA-6G: Unified Post-Quantum Security and Quantum Learning for UAVs in 6G IoT
IEEE Internet of Things Journal·2025
Evidence for Ga clusters in β-Ga2O3 from Raman spectroscopy and density functional theory
Journal of Applied Physics·2025Open Access
Orientation-dependent <i>β</i>-Ga2O3 heterojunction diode with atomic layer deposition (ALD) NiO
Applied Physics Letters·2025· 2 cited
Kilovolt-Class $β-Ga_2O_3$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $10^{15}$ $cm^{-3}$ Doped Drift Layers
arXiv (Cornell University)·2025Open Access
MACO: A Multi-Agent LLM-Based Hardware/Software Co-Design Framework for CGRAs
ArXiv.org·2025Open Access
Context-Aware Retrieval-Augmented Generation for Artificial Intelligence in Urology
Cureus·2025· 1 citedOpen Access
Multi-fin β -Ga 2 O 3 Vertical FinFET with Interfin Field Oxide Exhibiting a Breakdown Voltage of 1.8kV and Power Figure of Merit of 1GW/cm 2
2025Open Access
Digital Twin-Enabled Real-Time Optimization System for Traffic and Power Grid Management in 6G-Driven Smart Cities
IEEE Internet of Things Journal·2025· 8 cited
AI and Machine Learning in Urology: Current Uses and Future Directions
2025
Artificial Intelligence in Medical Education: Transforming Learning and Practice
Cureus·2025· 32 citedOpen Access
Growth of nitrogen-doped (010) <i>β</i>-Ga2O3 by plasma-assisted molecular beam epitaxy using an O2/N2 gas mixture
Applied Physics Letters·2025· 5 cited
Nutcracker Syndrome: Anatomical, Physiological and Clinical Correlations
2025
Dielectric reliability and interface trap characterization in MOCVD grown <i>in situ</i> Al2O3 on β-Ga2O3
Applied Physics Letters·2025· 7 cited
Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage &amp;gt;3 kV with plasma etch field-termination
AIP Advances·2025· 10 citedOpen Access
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Frequent Co-authors

Siddharth Rajan(23), P. Sadayappan(10), Digbijoy N. Nath(9), Fatih Akyol(9), J. Ramanujam(8), Pil Sung Park(7), Arkka Bhattacharyya(7), Sanyam Bajaj(7), Yuewei Zhang(7), Saurav Roy(6), Zhanbo Xia(5), Muthu Manikandan Baskaran(5), Uday Bondhugula(5), Atanas Rountev(5), Praneeth Ranga(4), Ting-Hsiang Hung(4), Jinwoo Hwang(4), Sukwon Choi(3), Anamika Singh Pratiyush(3), R. Muralidharan(3)