Siddharth Rajan

Dalhousie University — Canada

Physics and Astronomy · Physical Sciences

62h-index14.2kcitations381works3.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(233), Ga2O3 and related materials(184), Semiconductor materials and devices(122), ZnO doping and properties(100), Semiconductor Quantum Structures and Devices(67)

Publications381 total

Radio frequency analysis of scaled BaTiO3/Al2O3/In0.04Al0.70GaN0.26/GaN MISHEMTs
APL Electronic Devices·2025Open Access
<i>(Invited)</i> Ultra-Wide Bandgap AlGaN Alloys for RF &amp; Power Lateral Transistors
ECS Meeting Abstracts·2025
Broad-Range Tuning of Ferroelectric Switching of LaxBi1-xFeO3 Epitaxial Films via Digital Doping using Off-Axis Co-Sputtering
arXiv (Cornell University)·2025Open Access
Continuous-Wave Electrically-Pumped MBE-Grown AlGaN UV-A Lasers with Tunnel Junctions
2025Open Access
High breakdown electric field (&amp;gt;5 MV/cm) in UWBG AlGaN transistors
APL Electronic Devices·2025· 3 citedOpen Access
Current Dispersion Suppression and Breakdown Voltage Enhancement on AlN/GaN HEMTs With BaTiO <sub>3</sub> and In Situ SiN <sub>x</sub> Passivation
IEEE Electron Device Letters·2025
Charge recovery by vacuum annealing in <i>β</i>-Ga2O3 multi-fin trench Schottky barrier diodes
APL Electronic Devices·2025· 3 citedOpen Access
Electrical and structural characterization of <i>in situ</i> MOCVD Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs
Journal of Applied Physics·2025· 4 citedOpen Access
PIDNet-SLAM: A Multi-Resolution Semantic SLAM Algorithm for Dynamic Scenes
2025
Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts
APL Electronic Devices·2025· 1 citedOpen Access
Integration of light emitting diodes and transistors for next-generation display and lighting
2025
Investigations of compensating deep acceptor defects in β-Ga2O3 by thermal and optical defect spectroscopy methods
2025
Heterogeneous integration of 20x10 µm blue micro-LEDs/pixels on GaN HEMTs for visible light communication
2025
Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs
Applied Physics Letters·2025· 1 cited
Ultra-high permittivity BaTiO3 (<i>ε</i> = 230) on Al2O3/AlGaN/GaN MISHEMTs for field-management in high-voltage RF applications
APL Electronic Devices·2025· 4 citedOpen Access
Heterostructure and interfacial engineering for low-resistance contacts to ultra-wide bandgap AlGaN
Applied Physics Letters·2025· 11 cited
In situ SiN/AlN/GaN HEMTs with regrown contacts using selective etching
Applied Physics Express·2025· 1 citedOpen Access
Electrical and Structural Properties of In-Situ MOCVD Grown Al$_2$O$_3$/$β$-Ga$_2$O$_3$ and Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ MOSCAPs
arXiv (Cornell University)·2025Open Access
First MBE-Grown Continuous-Wave Electrically-Pumped AlGaN UV-A Lasers with Buried Tunnel Junctions
2025
Progresses and Frontiers in Ultrawide Bandgap Semiconductors
Advanced Electronic Materials·2025· 7 citedOpen Access
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Frequent Co-authors

Sriram Krishnamoorthy(18), Zhanbo Xia(14), Umesh K. Mishra(13), Yuewei Zhang(12), James S. Speck(11), Digbijoy N. Nath(9), Chandan Joishi(8), Fatih Akyol(8), Mark Brenner(7), Aaron R. Arehart(7), Sanyam Bajaj(7), Pil Sung Park(7), S. Keller(6), Steven P. DenBaars(6), Saurabh Lodha(6), Steven A. Ringel(6), Joe F. McGlone(5), C. Poblenz(4), Ting-Hsiang Hung(4), Masataka Higashiwaki(3)