Ting-Hsiang Hung

Physics and Astronomy · Physical Sciences

11h-index631citations19works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(15), Semiconductor materials and devices(9), Ga2O3 and related materials(8), ZnO doping and properties(5), Advancements in Semiconductor Devices and Circuit Design(5)

Publications19 total

List of contributors
Elsevier eBooks·2022
Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer
arXiv (Cornell University)·2015· 2 citedOpen Access
Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer
arXiv (Cornell University)·2015Open Access
Power switching transistors based on GaN and AlGaN channels
2015· 1 cited
Novel High-k Dielectric Enhanced III-Nitride Devices
OhioLink ETD Center (Ohio Library and Information Network)·2015Open Access
Density-dependent electron transport and precise modeling of GaN high electron mobility transistors
Applied Physics Letters·2015· 86 citedOpen Access
Density-dependent electron transport for accurate modeling of AlGaN/GaN HEMTs
2015
Lateral energy band engineering of Al<inf>2</inf>O<inf>3</inf>/III-nitride interfaces
2014· 1 cited
Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3
Applied Physics Letters·2014· 51 cited
Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs
IEEE Electron Device Letters·2014· 102 cited
Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors
Applied Physics Letters·2013· 17 cited
A study of electrically active traps in AlGaN/GaN high electron mobility transistor
Applied Physics Letters·2013· 15 cited
Interface charge engineering in GaN-based MIS-HEMTs
2013
Determination of trap energy levels in AlGaN/GaN HEMT
2013· 12 cited
Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces
Applied Physics Letters·2013· 87 cited
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al <sub>2</sub> O <sub>3</sub> -on-GaN MOS diodes
Electronics Letters·2012· 15 cited
Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors
Applied Physics Letters·2011· 65 cited
Electrical properties of atomic layer deposited aluminum oxide on gallium nitride
Applied Physics Letters·2011· 166 citedOpen Access
Surface plasmon on aluminum concentric rings arranged in a long-range periodic structure
Applied Physics Letters·2008· 11 cited

Frequent Co-authors

Siddharth Rajan(16), Sriram Krishnamoorthy(14), Digbijoy N. Nath(9), Sanyam Bajaj(7), Pil Sung Park(7), Fatih Akyol(5), Michele Esposto(4), Sharon Cui(3), Omor Shoron(2), Shahed Reza(2), Eduardo M. Chumbes(2), Jacob B. Khurgin(2), Jie Yang(2), T. P.(2), Kohei Sasaki(1), Akito Kuramata(1), C. Polchinski(1), Valerio Di Lecce(1), Alessandro Chini(1), Jie Yang(1)