Pil Sung Park

Navitas Systems (United States) — United States

Physics and Astronomy · Physical Sciences

15h-index1.2kcitations29works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(25), Ga2O3 and related materials(12), ZnO doping and properties(9), Semiconductor Quantum Structures and Devices(8), Semiconductor materials and devices(7)

Publications29 total

Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity
IEEE Transactions on Electron Devices·2017· 93 cited
Small-signal characteristics of graded AlGaN channel PolFETs
2017· 2 cited
Density-dependent electron transport and precise modeling of GaN high electron mobility transistors
Applied Physics Letters·2015· 86 citedOpen Access
Density-dependent electron transport for accurate modeling of AlGaN/GaN HEMTs
2015
Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs
IEEE Electron Device Letters·2015· 21 cited
Lateral energy band engineering of Al<inf>2</inf>O<inf>3</inf>/III-nitride interfaces
2014· 1 cited
Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3
Applied Physics Letters·2014· 51 cited
Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs
IEEE Electron Device Letters·2014· 102 cited
Interface charge engineering in GaN-based MIS-HEMTs
2013
Large area single crystal (0001) oriented MoS2
Applied Physics Letters·2013· 214 citedOpen Access
GdN Nanoisland-Based GaN Tunnel Junctions
Nano Letters·2013· 61 citedOpen Access
Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion
Applied Physics Letters·2013· 30 cited
Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces
Applied Physics Letters·2013· 87 cited
Electrical Properties of Graphene/AlGaN/GaN Heterostructures
arXiv (Cornell University)·2013· 1 citedOpen Access
Ohmic Contact Formation Between Metal and AlGaN/GaN Heterostructure via Graphene Insertion
arXiv (Cornell University)·2013Open Access
Advanced Channel Engineering in III-Nitride HEMTs for High Frequency Performance
OhioLink ETD Center (Ohio Library and Information Network)·2013· 1 citedOpen Access
Efficient GaN tunnel junctions using embedded GdN nanoislands
arXiv (Cornell University)·2012Open Access
GdN nanoislands as midgap states for low resistance GaN tunnel junctions
arXiv (Cornell University)·2012Open Access
Record low tunnel junction specific resistivity (< 3×10<sup>−4</sup> Ωcm<sup>2</sup>) in GaN inter-band tunnel junctions
2012
Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures
IEEE Electron Device Letters·2012· 25 cited
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Frequent Co-authors

Siddharth Rajan(28), Digbijoy N. Nath(18), Sriram Krishnamoorthy(17), Fatih Akyol(8), Ting-Hsiang Hung(7), Sanyam Bajaj(6), Michele Esposto(5), Roberto C. Myers(4), Jing Yang(3), K. M. Reddy(3), Nitin P. Padture(3), David F. Brown(3), S. Keller(3), Umesh K. Mishra(3), Zhichao Yang(2), Yuewei Zhang(2), David J. Meyer(2), Omor Shoron(2), Shahed Reza(2), Eduardo M. Chumbes(2)