Sanyam Bajaj

Intel (United States) — United States

Physics and Astronomy · Physical Sciences

16h-index1.5kcitations31works0.02yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

GaN-based semiconductor devices and materials(27), Ga2O3 and related materials(21), Semiconductor materials and devices(12), Radio Frequency Integrated Circuit Design(6), Silicon Carbide Semiconductor Technologies(5)

Publications31 total

Al<sub>0.7</sub>Ga<sub>0.3</sub>N MESFET With All-Refractory Metal Process for High Temperature Operation
IEEE Transactions on Electron Devices·2021· 10 citedOpen Access
Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors
Applied Physics Express·2020· 13 cited
BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm
Applied Physics Letters·2020· 24 cited
Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiN<sub>x</sub> Passivation
IEEE Electron Device Letters·2019· 56 cited
Lateral Heterojunction BaTiO3/AlGaN Diodes with &gt;8MV/cm Breakdown Field
arXiv (Cornell University)·2019Open Access
Lateral Heterojunction BaTiO3/AlGaN Diodes with >8MV/cm Breakdown Field
arXiv (Cornell University)·2019Open Access
Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications
IEEE Electron Device Letters·2019· 43 cited
X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors
IEEE Electron Device Letters·2018· 50 cited
[JSAP Paper Award Speech] Delta-doped β-gallium oxide field-effect transistor
The Japan Society of Applied Physics·2018
Ultra-wide band gap AlGaN polarization-doped field effect transistor
Japanese Journal of Applied Physics·2018· 32 cited
All MOCVD grown 250 nm gate length Al<sub>0.70</sub>Ga<sub>0.30</sub>N MESFETs
2018· 2 cited
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
Applied Physics Letters·2018· 338 cited
Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts
IEEE Electron Device Letters·2018· 133 cited
High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures
arXiv (Cornell University)·2018Open Access
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
Applied Physics Letters·2018· 76 cited
High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm
IEEE Electron Device Letters·2017· 59 cited
Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity
IEEE Transactions on Electron Devices·2017· 93 cited
Small-signal characteristics of graded AlGaN channel PolFETs
2017· 2 cited
Tunnel-injected sub-260 nm ultraviolet light emitting diodes
Applied Physics Letters·2017· 62 citedOpen Access
Delta-doped β-gallium oxide field-effect transistor
Applied Physics Express·2017· 146 citedOpen Access
page 1 of 2Next →

Frequent Co-authors

Siddharth Rajan(31), Sriram Krishnamoorthy(16), Fatih Akyol(12), Yuewei Zhang(11), Shahadat H. Sohel(11), Towhidur Razzak(10), Zhanbo Xia(8), Wu Lu(8), Hao Xue(8), Ting-Hsiang Hung(7), Andrew A. Allerman(7), Andrew Armstrong(7), Pil Sung Park(6), Mark Brenner(5), Mohammad Wahidur Rahman(4), Andy Xie(4), Edward Beam(4), Yu Cao(4), Chandan Joishi(3), Jinwoo Hwang(3)