Towhidur Razzak

The Ohio State University — United States

Physics and Astronomy · Physical Sciences

13h-index500citations31works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(25), Semiconductor materials and devices(17), Ga2O3 and related materials(16), Radio Frequency Integrated Circuit Design(6), Metal and Thin Film Mechanics(3)

Publications31 total

Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors
Applied Physics Letters·2021· 26 citedOpen Access
Al<sub>0.7</sub>Ga<sub>0.3</sub>N MESFET With All-Refractory Metal Process for High Temperature Operation
IEEE Transactions on Electron Devices·2021· 10 citedOpen Access
Hybrid BaTiO3/SiNx/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance
Applied Physics Letters·2021· 20 citedOpen Access
High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V
physica status solidi (RRL) - Rapid Research Letters·2021· 8 cited
Small signal analysis of ultra-wide bandgap Al0.7Ga0.3N channel MESFETs
Microelectronic Engineering·2020· 7 cited
Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates
Advanced Electronic Materials·2020· 30 cited
Al<sub>0.65</sub>Ga<sub>0.35</sub>N/Al<sub>0.4</sub>Ga<sub>0.6</sub>N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm
IEEE Electron Device Letters·2020· 31 cited
Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors
Applied Physics Express·2020· 13 cited
High Current Density SmTiO<sub>3</sub>/SrTiO<sub>3</sub> Field-Effect Transistors
ACS Applied Electronic Materials·2020· 9 cited
BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm
Applied Physics Letters·2020· 24 cited
Engineering Extreme Electric Fields for Ultra-wide Bandgap Semiconductor Electronics
The Knowledge Bank (The Ohio State University)·2020Open Access
Ultra-Wide Bandgap Al<sub>x</sub>Ga<sub>1-x</sub>N Channel Transistors
Selected topics in electornics and systems·2019
FRONT MATTER
Selected topics in electornics and systems·2019
Wide Bandgap Semiconductor Electronics and Devices
Selected topics in electornics and systems·2019· 5 cited
Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiN<sub>x</sub> Passivation
IEEE Electron Device Letters·2019· 56 cited
All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors
Solid-State Electronics·2019· 30 citedOpen Access
Lateral Heterojunction BaTiO3/AlGaN Diodes with &gt;8MV/cm Breakdown Field
arXiv (Cornell University)·2019Open Access
Lateral Heterojunction BaTiO3/AlGaN Diodes with >8MV/cm Breakdown Field
arXiv (Cornell University)·2019Open Access
(Invited) Novel Channel Engineering for High-Performance AlGaN-Based Transistors
ECS Meeting Abstracts·2019
RF Performance of 130 nm Al<sub>0.75</sub>Ga<sub>0.25</sub>N/Al<sub>0.6</sub>Ga<sub>0.4</sub>N HFETs with MBE-Regrown Contacts
2019
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Frequent Co-authors

Siddharth Rajan(25), Wu Lu(18), Hao Xue(18), Shahadat H. Sohel(17), Asif Khan(12), Sanyam Bajaj(10), Zhanbo Xia(8), Mohammad Wahidur Rahman(7), Kamal Hussain(6), Hareesh Chandrasekar(6), Andy Xie(5), Edward Beam(5), Yu Cao(5), Choong Hee Lee(5), Abdullah Mamun(5), Andrew Armstrong(4), Caiyu Wang(4), Seongmo Hwang(4), Vishank Talesara(3), Yuewei Zhang(3)