Alessandro Chini

University of Modena and Reggio Emilia — Italy

Physics and Astronomy · Physical Sciences

33h-index5.2kcitations222works1.32yr avg
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Research Topics

GaN-based semiconductor devices and materials(178), Semiconductor materials and devices(91), Semiconductor Quantum Structures and Devices(72), Silicon Carbide Semiconductor Technologies(71), Radio Frequency Integrated Circuit Design(46)

Publications222 total

Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation
Electronics·2025Open Access
Impact of SiN Passivation on Dynamic-RON Degradation of 100 V p-GaN Gate AlGaN/GaN HEMTs
Electronic Materials·2025Open Access
On the Correlation Between Dynamic-Q<sub>OSS</sub> and Dynamic-R<sub>ON</sub> in GaN-Based HEMTs
IEEE Transactions on Electron Devices·2025
On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs
Micromachines·2025Open Access
Analysis of Dynamic- <i>R</i> <sub>on</sub> and <i>V</i> <sub>TH</sub> Shift in On-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits
IEEE Journal of Emerging and Selected Topics in Power Electronics·2025· 1 citedOpen Access
Switching Loss Model for SiC MOSFETs Based on Datasheet Parameters Enabling Virtual Junction Temperature Estimation
Sensors·2025· 2 citedOpen Access
Die-Attach Influence on Thermal/Electrical Parameters of GaN RF Device
IEEE Transactions on Device and Materials Reliability·2025
Effect of 2DEG density and Drain/Source Field Plate design on dynamic-RON of 650 V AlGaN/GaN HEMTs
Microelectronics Reliability·2025· 5 cited
Influence of Substrate connection on dynamic-RON drift of 650 V packaged GaN HEMTs
Power Electronic Devices and Components·2025· 1 citedOpen Access
Physical Modelling of Charge Trapping Effects
Springer tracts in electrical and electronics engineering·2024· 1 cited
R<sub>ON</sub> Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits
2024· 1 cited
Preliminary Evaluation of PBTI and Back-Effect interplay in 100 V p-GaN gate AlGaN/GaN HEMTs
2024
On-Wafer R<sub>ON</sub> Degradation Analysis of 100 V p-GaN HEMTs Emulating Low- and High-Side Operation in Half Bridge Circuits
2024· 1 citedOpen Access
Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs
Electronic Materials·2024· 3 citedOpen Access
On the Dynamic R<sub>ON</sub>, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers
IEEE Electron Device Letters·2024· 2 citedOpen Access
Hole Virtual Gate Model Explaining Surface-Related Dynamic R<sub>ON</sub> in p-GaN Power HEMTs
IEEE Electron Device Letters·2024· 4 citedOpen Access
Impact of Process Variations on Back-Bias Effect in 100V p-GaN Gate AlGaN/GaN HEMTs
2023· 2 citedOpen Access
Dynamic Behavior of Threshold Voltage and <i>I</i> <sub>D</sub> – <i>V</i> <sub>DS</sub> Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect
IEEE Transactions on Electron Devices·2023· 3 citedOpen Access
Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies
e-Prime - Advances in Electrical Engineering Electronics and Energy·2023· 4 citedOpen Access
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
IEEE Transactions on Electron Devices·2023· 33 citedOpen Access
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Frequent Co-authors

Gaudenzio Meneghesso(30), Enrico Zanoni(28), Umesh K. Mishra(18), Matteo Meneghini(17), G. Verzellesi(14), S. Keller(14), S. Heikman(12), D. Buttari(11), R. Coffie(10), Nicolò Zagni(8), Antonio Stocco(8), Steven P. DenBaars(7), L. Shen(7), A. Chakraborty(6), F. Fantini(5), Michele Esposto(5), Carlo De Santi(4), Davide Bisi(4), Huili Grace Xing(4), Fabiana Rampazzo(4)