Matteo Meneghini

University of Padua — Italy

Physics and Astronomy · Physical Sciences

58h-index16.7kcitations768works4.92yr avg
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Research Topics

GaN-based semiconductor devices and materials(582), Semiconductor materials and devices(379), Semiconductor Quantum Structures and Devices(185), Silicon Carbide Semiconductor Technologies(142), Ga2O3 and related materials(140)

Publications768 total

How the absorber thickness affects the electrical and structural properties of Sb2Se3 solar cells
Materials Science in Semiconductor Processing·2026Open Access
720 V quasi-vertical GaN-on-silicon p–n diodes with surge capability fabricated using selective area growth
Journal of Applied Physics·2025· 1 citedOpen Access
A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films
Japanese Journal of Applied Physics·2025
Experimental Evidence of Sustainable Avalanche Operation in E-Mode GaN HEMTs
IEEE Electron Device Letters·2025
Diffusion mechanism as cause of optical degradation in AlGaN-based UV-C leds investigated by TCAD simulations
Scientific Reports·2025· 3 citedOpen Access
RESULTS OF THE JOINT LED AGING EXPERIMENT OF THREE UNIVERSITY LABORATORIES WITHIN THE AI-TWILIGHT PROJECT
2025
Deep-Level Effects in Back-Barrier-Scaled GaN HEMTs
IEEE Transactions on Microwave Theory and Techniques·2025
Variation of Dynamic ON-Resistance in SiC and p-GaN HEMTs During DHTOL Operation
SPIRE - Sciences Po Institutional REpository·2025Open Access
Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction
SPIRE - Sciences Po Institutional REpository·2025Open Access
Extrinsic Failure of High-Power Blue LEDs for Horticulture Applications Stressed in Hot Environments
2025
Modeling Cracks in Silicon-Heterojunction Photovoltaic Modules: A Real-World Case Study
IEEE Journal of Photovoltaics·2025
Enhanced Gate Reliability of p-GaN/AlGaN/GaN HEMTs Due to Gate Hole Injection and Recombination
IEEE Electron Device Letters·2025
Efficiency- and lifetime-limiting effects of commercially available UVC LEDs: a review
Journal of Physics Photonics·2025· 6 citedOpen Access
Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs
2025· 1 cited
The effect of thickness on the Sb<sub>2</sub>Se<sub>3</sub> superstrate solar cells
2025
Superior stability of Sb-doped CdSeTe/CdTe devices
2025
Ultra-fast recovery transients in GaN MIS-HEMT submitted to OFF-state stress
Microelectronics Reliability·2025
Systematic analysis of the trapping and reliability of Al2O3/GaN MOS capacitors with different atomic layer deposition techniques
Materials Science in Semiconductor Processing·2025· 1 citedOpen Access
Study of trapping mechanisms affecting AlGaN/GaN HEMTs adopting AlGaN back-barriers with different aluminum concentrations
Microelectronics Reliability·2025· 1 citedOpen Access
Understanding the Ga Polar n‐GaN Surface after Mg Diffusion Process
physica status solidi (a)·2025Open Access
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Frequent Co-authors

Gaudenzio Meneghesso(49), Enrico Zanoni(46), Carlo De Santi(12), Davide Bisi(10), Denis Marcon(9), Stefaan Decoutere(8), M. Van Hove(7), Alessandro Chini(7), Isabella Rossetto(7), Steve Stoffels(7), G. Verzellesi(6), P. Moens(6), Tian‐Li Wu(5), Nicola Trivellin(4), G. Mura(4), Antonio Stocco(4), Abhishek Banerjee(4), Martin Kuball(3), Michael J. Uren(3), Augusto Tazzoli(3)