Michael J. Uren

University of Bristol — United Kingdom

Physics and Astronomy · Physical Sciences

51h-index12.4kcitations370works3.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(211), Semiconductor materials and devices(205), Silicon Carbide Semiconductor Technologies(113), Advancements in Semiconductor Devices and Circuit Design(110), Semiconductor Quantum Structures and Devices(45)

Publications370 total

Charge Transport in GaN High Electron Mobility Transistor With Positive Substrate Bias
IEEE Transactions on Electron Devices·2025· 2 citedOpen Access
Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications
Nature Electronics·2025· 5 citedOpen Access
Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates
Applied Physics Letters·2024· 2 citedOpen Access
Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements
Journal of Applied Physics·2024· 6 citedOpen Access
GaN multichannel devices with latch-induced sub-60 mV/decade subthreshold slope.
2024Open Access
Extraction of Sub-Threshold Mobility in Ga<sub>2</sub>O<sub>3</sub> Lateral Transistors From AC Conductance
IEEE Electron Device Letters·2023· 1 cited
Low-Loss MIM Capacitor on Thick SiO<sub>2</sub> Dielectric for GaN-on-Si Substrates with Standard and Elevated Top Electrode Configurations
2023· 2 cited
Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors
IEEE Electron Device Letters·2023· 3 citedOpen Access
AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach
Semiconductor Science and Technology·2023· 5 citedOpen Access
Modelling of impedance dispersion in lateral β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs due to parallel conductive Si-accumulation layer
Applied Physics Express·2023· 2 citedOpen Access
Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs
2023· 3 citedOpen Access
Origin of Transconductance roll-off in mmWave AlGaN/GaN HEMTs
Bristol Research (University of Bristol)·2023Open Access
Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation
Applied Physics Letters·2022· 8 citedOpen Access
Ga<sub>2</sub>O<sub>3</sub> – diamond for next generation power electronics
2022 6th IEEE Electron Devices Technology &amp; Manufacturing Conference (EDTM)·2022· 1 cited
Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs
IEEE Transactions on Electron Devices·2022· 5 cited
Breakdown Mechanisms in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Trench-MOS Schottky-Barrier Diodes
IEEE Transactions on Electron Devices·2021· 19 cited
Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks
Applied Physics Letters·2021· 10 cited
Electrical and Thermal Performance of Ga₂O₃–Al₂O₃–Diamond Super-Junction Schottky Barrier Diodes
IEEE Transactions on Electron Devices·2021· 28 citedOpen Access
Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation
Semiconductor Science and Technology·2021· 10 citedOpen Access
Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution
Nature Electronics·2021· 31 citedOpen Access
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Frequent Co-authors

Martin Kuball(23), K.P. Hilton(10), R.S. Balmer(9), T. Martin(9), James W. Pomeroy(8), Trevor Martin(7), D. J. Wallis(6), Andrei Sarua(5), M. J. Kirton(4), Gaudenzio Meneghesso(4), Enrico Zanoni(4), Serge Karboyan(4), P. Moens(4), P.A. Houston(3), Matteo Meneghini(3), M.I.J. Beale(3), J. D. Benjamin(3), N. G. Chew(3), A. G. Cullis(3), B.T. Hughes(3)