Enrico Zanoni

University of Padua — Italy

Physics and Astronomy · Physical Sciences

63h-index20.8kcitations1.1kworks5.62yr avg
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Research Topics

GaN-based semiconductor devices and materials(653), Semiconductor materials and devices(582), Advancements in Semiconductor Devices and Circuit Design(254), Semiconductor Quantum Structures and Devices(253), Silicon Carbide Semiconductor Technologies(189)

Publications1.1k total

A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films
Japanese Journal of Applied Physics·2025
Experimental Evidence of Sustainable Avalanche Operation in E-Mode GaN HEMTs
IEEE Electron Device Letters·2025
Diffusion mechanism as cause of optical degradation in AlGaN-based UV-C leds investigated by TCAD simulations
Scientific Reports·2025· 3 citedOpen Access
RESULTS OF THE JOINT LED AGING EXPERIMENT OF THREE UNIVERSITY LABORATORIES WITHIN THE AI-TWILIGHT PROJECT
2025
Deep-Level Effects in Back-Barrier-Scaled GaN HEMTs
IEEE Transactions on Microwave Theory and Techniques·2025
Variation of Dynamic ON-Resistance in SiC and p-GaN HEMTs During DHTOL Operation
SPIRE - Sciences Po Institutional REpository·2025Open Access
Field driven failure mechanism on 100V p-GaN HEMT with gate metal retraction
SPIRE - Sciences Po Institutional REpository·2025Open Access
Extrinsic Failure of High-Power Blue LEDs for Horticulture Applications Stressed in Hot Environments
2025
Modeling Cracks in Silicon-Heterojunction Photovoltaic Modules: A Real-World Case Study
IEEE Journal of Photovoltaics·2025
Enhanced Gate Reliability of p-GaN/AlGaN/GaN HEMTs Due to Gate Hole Injection and Recombination
IEEE Electron Device Letters·2025
Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs
2025· 1 cited
Ultra-fast recovery transients in GaN MIS-HEMT submitted to OFF-state stress
Microelectronics Reliability·2025
Systematic analysis of the trapping and reliability of Al2O3/GaN MOS capacitors with different atomic layer deposition techniques
Materials Science in Semiconductor Processing·2025· 1 citedOpen Access
Study of trapping mechanisms affecting AlGaN/GaN HEMTs adopting AlGaN back-barriers with different aluminum concentrations
Microelectronics Reliability·2025· 1 citedOpen Access
Current Collapse in Buffer-Free GaN-on-SiC Power Transistors: Maxwell-Wagner Effect and Related Model
IEEE Transactions on Electron Devices·2025
Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs
Scientific Reports·2025· 1 citedOpen Access
OFF-state breakdown and threshold voltage stability of vertical GaN-on-Si trench MOSFETs
Microelectronics Reliability·2025· 1 citedOpen Access
Impact of drain-source leakage on the dynamic Ron of power HEMTs with p-GaN gate
Microelectronics Reliability·2025Open Access
V<sub>th</sub> and R<sub>on</sub> Instability of GaN Power HEMTs with pGaN Gate Under Negative Gate Bias
2025
Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications
2025
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Frequent Co-authors

Gaudenzio Meneghesso(46), Matteo Meneghini(38), Carlo De Santi(9), G. Verzellesi(9), Davide Bisi(9), Denis Marcon(8), Alessandro Chini(8), Stefaan Decoutere(7), M. Van Hove(7), Isabella Rossetto(7), Fabiana Rampazzo(5), Steve Stoffels(5), P. Moens(5), Francesca Danesin(4), Augusto Tazzoli(4), Antonio Stocco(4), Abhishek Banerjee(4), Nicola Trivellin(3), Michael J. Uren(3), Matteo Buffolo(3)