Steven P. DenBaars

University of California, Santa Barbara — United States

Physics and Astronomy · Physical Sciences

126h-index67.1kcitations1.5kworks2.92yr avg
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Research Topics

GaN-based semiconductor devices and materials(1229), Semiconductor Quantum Structures and Devices(615), Ga2O3 and related materials(390), Semiconductor materials and devices(378), ZnO doping and properties(299)

Publications1.5k total

Enhanced emission efficiency and directionality in InGaN/GaN microLEDs laterally enclosed by distributed Bragg reflectors
Optics Express·2025Open Access
Green (524 nm) InGaN/GaN laser diodes with nano-porous cladding and deep-ridge waveguiding
Optics Express·2025Open Access
Improved efficiency of semipolar micro-LEDs enabled by epitaxial lateral overgrowth
Semiconductor Science and Technology·2025Open Access
High-<i>Q</i>, Size-Independent, and Reconfigurable Optical Antennas Embedded in Zero-Index Cavities
ACS Nano·2025
Recent Advancements in N-polar GaN HEMT Technology
Crystals·2025· 1 citedOpen Access
Demonstration of a microcavity LED with a nanoporous DBR and a GaN tunnel junction contact
2025
Unidirectional air-side and substrate-side emission from GaN/InGaN microLEDs
2025
III-nitride thin film liftoff using electrochemical etching
Applied Physics Letters·2025· 1 cited
Structural and electrical properties of MOCVD-grown scandium nitride thin films on sapphire, Si, GaN, and SiC
Applied Physics Letters·2025· 1 cited
Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs
Applied Physics Letters·2025· 1 citedOpen Access
Origin of reduced efficiency in GaN-based micro-LEDs studied by scanning near-field optical microscopy
Applied Physics Letters·2025Open Access
Micro-LED-based quantum random number generators
Optics Express·2025· 1 citedOpen Access
Characterization of long-cavity GaN vertical-cavity surface-emitting lasers with a topside dielectric lens
Japanese Journal of Applied Physics·2025Open Access
10.4% external quantum efficiency 294 nm UV LEDs at 20 A/cm<sup>2</sup> with a fully transparent tunnel junction
Optics Express·2025· 1 citedOpen Access
Increasing light extraction efficiency for UV LEDs with a low coverage p-GaN hole injection layer
Optics Express·2025· 3 citedOpen Access
Advancements in GaN DFBs with embedded gratings and a path to higher power
2025
Enhanced optical gain of InGaN laser diodes via local anisotropic strain relaxation on a strain relaxed template with reduced threading dislocation density
2025
Fabrication and linewidth characterization of III-nitride distributed feedback laser diodes with embedded surface gratings
2025
Hole injection through V-defects in long wavelength GaN LEDs
2025
Developments toward monolithic III-N microLEDs: red InGaN active region and tunnel junctions grown by MOCVD
2025
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Frequent Co-authors

Umesh K. Mishra(27), James S. Speck(26), S. Keller(23), Shuji Nakamura(12), P. Fini(9), B. Heying(8), B.P. Keller(8), D. Kapolnek(6), S. Heikman(6), P. Kozodoy(6), E. J. Tarsa(6), J. P. Ibbetson(5), Xuehua Wu(5), P. M. Petroff(3), A. Chakraborty(3), I. P. Smorchkova(3), C. R. Elsass(3), Alexander Mikhailovsky(3), Ram Seshadri(3), Matthew S. Wong(3)