C. R. Elsass

University of California, Santa Barbara — United States

Physics and Astronomy · Physical Sciences

15h-index2.2kcitations27works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(26), Ga2O3 and related materials(20), ZnO doping and properties(14), Semiconductor materials and devices(6), Semiconductor Quantum Structures and Devices(5)

Publications27 total

Fermi edge singularity observed in GaN/AlGaN heterointerfaces
Applied Physics Letters·2009· 8 cited
Study of deleterious aging effects in GaN/AlGaN heterostructures
Journal of Applied Physics·2003· 6 cited
Optimization of aluminum gallium nitride growth by molecular beam epitaxy and its effect on electron mobility in a two-dimensional electron gas
2002
Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope
Journal of Applied Physics·2002· 97 cited
Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling
Applied Physics Letters·2002· 47 cited
Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Journal of Crystal Growth·2001· 19 cited
Temperature Dependent Photoluminescence of MBE Grown Gallium Nitride Quantum Dots
physica status solidi (b)·2001· 22 cited
Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy
Japanese Journal of Applied Physics·2001· 12 cited
Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy
Applied Physics Letters·2001· 7 cited
Intrinsic mobility limits in polarization induced two-dimensional electron gases
Springer proceedings in physics·2001· 2 cited
Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers
Applied Physics Letters·2000· 117 cited
Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure
Journal of Applied Physics·2000· 20 cited
Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy
Applied Physics Letters·2000· 52 cited
Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy
Applied Physics Letters·2000· 195 cited
Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
Japanese Journal of Applied Physics·2000· 12 cited
Polarization effects and transport in AlGaN/GaN system
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2000· 13 cited
Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies
Journal of Applied Physics·2000· 107 citedOpen Access
Characterization of an AlGaN/GaN two-dimensional electron gas structure
Journal of Applied Physics·2000· 68 citedOpen Access
Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure
MRS Proceedings·2000
Electrical transport of an AlGaN/GaN two-dimensional electron gas
MRS Internet Journal of Nitride Semiconductor Research·2000· 3 citedOpen Access
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Frequent Co-authors

James S. Speck(21), Umesh K. Mishra(18), B. Heying(17), Steven P. DenBaars(16), P. Fini(15), I. P. Smorchkova(14), S. Keller(11), P. M. Petroff(10), C. Poblenz(10), J. P. Ibbetson(8), A. Saxler(8), W. C. Mitchel(8), E. Haus(7), S. Elhamri(7), Edward T. Yu(3), P. Debray(3), R. Perrin(3), Y. Smorchkova(3), R. Vetury(2), Yifei Zhang(2)