I. P. Smorchkova

University of California, Santa Barbara — United States

Physics and Astronomy · Physical Sciences

21h-index3.4kcitations53works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(31), Semiconductor Quantum Structures and Devices(20), Quantum and electron transport phenomena(18), Ga2O3 and related materials(18), ZnO doping and properties(16)

Publications53 total

Fermi edge singularity observed in GaN/AlGaN heterointerfaces
Applied Physics Letters·2009· 8 cited
Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2005· 54 cited
Thermal Studies of Operating AlGaN/GaN/SiC Based High Electron Mobility Transistors
Bulletin of the American Physical Society·2005
Progress in gallium nitride-based bipolar transistors
2002· 4 cited
1.6 w/mm, 26% PAE AlGaN/GaN HEMT operation at 29GHz
2002· 12 cited
The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy
Journal of Crystal Growth·2002· 32 cited
GaN–GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design
Applied Physics Letters·2002· 38 cited
Erratum: “AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy” [J. Appl. Phys. <b>90</b>, 5196 (2001)]
Journal of Applied Physics·2002· 4 cited
Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors
Electronics Letters·2002· 15 cited
Electroreflectance and Photoreflectance Studies of Electric Fields in Pt/GaN Schottky Diodes and AlGaN/GaN Heterostructures
MRS Proceedings·2002
AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy
Journal of Applied Physics·2001· 323 cited
Electron Transport in III-V Nitride Two-Dimensional Electron Gases
physica status solidi (b)·2001· 49 cited
AlGaN/AlN/GaN high-power microwave HEMT
IEEE Electron Device Letters·2001· 482 cited
Gallium nitride based transistors
Journal of Physics Condensed Matter·2001· 108 cited
Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors
Applied Physics Letters·2001· 37 cited
GaN HBT: toward an RF device
IEEE Transactions on Electron Devices·2001· 84 cited
Current instabilities in GaN-based devices
IEEE Electron Device Letters·2001· 150 cited
Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers
Applied Physics Letters·2000· 117 cited
Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure
Journal of Applied Physics·2000· 20 cited
Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy
Applied Physics Letters·2000· 195 cited
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Frequent Co-authors

Umesh K. Mishra(27), James S. Speck(21), Nitin Samarth(20), Steven P. DenBaars(20), S. Keller(18), B. Heying(16), P. Fini(16), C. R. Elsass(14), D. D. Awschalom(9), E. Haus(9), J. P. Ibbetson(8), S. Heikman(6), C. Poblenz(6), P. M. Petroff(6), A. Saxler(6), S. Elhamri(6), W. C. Mitchel(6), James M. Kikkawa(5), L. Shen(5), J. M. Kikkawa(5)