B. Heying

Northrop Grumman (United States) — United States

Physics and Astronomy · Physical Sciences

28h-index5.5kcitations62works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(60), Ga2O3 and related materials(26), Semiconductor materials and devices(22), ZnO doping and properties(18), Semiconductor Quantum Structures and Devices(14)

Publications62 total

A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications
IEEE Journal of Microwaves·2023· 28 citedOpen Access
GaN Technology for Millimeter Wave Power Amplifiers
ECS Transactions·2013· 2 citedOpen Access
GaN HEMT Near Junction Heat Removal
2013· 6 cited
Diamond Materials for GaN HEMT near Junction Heat Removal
2012· 2 cited
GaN Technology for Millimeter Wave Power Amplifiers
ECS Meeting Abstracts·2012Open Access
Reliable GaN HEMTS for high frequency applications
2010 IEEE MTT-S International Microwave Symposium·2010· 21 cited
Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers
IEEE Transactions on Microwave Theory and Techniques·2009· 54 cited
Design and analysis of ultra wideband GaN dual-gate HEMT low noise amplifiers
2009· 15 cited
A V-Band Monolithic AlGaN/GaN VCO
IEEE Microwave and Wireless Components Letters·2008· 21 cited
Broadband GaN Dual-Gate HEMT Low Noise Amplifier
2007· 32 cited
In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy
Electronics Letters·2007· 21 cited
Temperature and Voltage Dependent RF Degradation Study in Algan/gan HEMTs
2007· 29 cited
Reliability of AlGaN/AlN/GaN HEMTs
ECS Meeting Abstracts·2007
A Q-band low phase noise monolithic AlGaN/GaN HEMT VCO
IEEE Microwave and Wireless Components Letters·2006· 25 cited
Impact of A1N Interalayer on Reliability of AlGaN/GaN HEMTS
2006· 13 cited
Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2005· 54 cited
Scans along arbitrary directions in reciprocal space and the analysis of GaN films on SiC
Journal of Physics D Applied Physics·2005· 19 cited
Thermal Studies of Operating AlGaN/GaN/SiC Based High Electron Mobility Transistors
Bulletin of the American Physical Society·2005
X-Ray Diffraction Imaging of GaN-Based Heterostructures on SiC
Materials science forum·2004
X-ray diffraction imaging of wide bandgap materials
2004· 1 cited
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Frequent Co-authors

James S. Speck(34), Umesh K. Mishra(24), Steven P. DenBaars(23), P. Fini(19), S. Keller(15), C. R. Elsass(15), I. P. Smorchkova(13), Ioulia Smorchkova(13), E. Haus(10), M. Wójtowicz(10), J. P. Ibbetson(7), C. Poblenz(7), P. M. Petroff(7), A. Saxler(6), W. C. Mitchel(6), A.K. Oki(6), D. Kapolnek(5), B.P. Keller(5), E. J. Tarsa(5), Xuehua Wu(5)