D. Buttari

Northrop Grumman (United States) — United States

Physics and Astronomy · Physical Sciences

18h-index1.8kcitations47works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

GaN-based semiconductor devices and materials(32), Semiconductor materials and devices(26), Semiconductor Quantum Structures and Devices(19), Advancements in Semiconductor Devices and Circuit Design(12), Radio Frequency Integrated Circuit Design(11)

Publications47 total

High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates
2010· 3 cited
Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications
2010· 1 cited
Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
physica status solidi (b)·2007· 4 cited
Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
UWA Profiles and Research Repository (University of Western Australia)·2007
Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs
IEEE Transactions on Electron Devices·2006· 100 cited
AlGaN/AlN/GaN High Electron Mobility Transistors with Improved Carrier Transport
2006· 11 cited
Selective dry etching of GaN over AlGaN in BCL/sub 3//SF/sub 6/ mixtures
2005· 12 cited
Proton-induced damage in gallium nitride-based Schottky diodes
IEEE Transactions on Nuclear Science·2005· 38 cited
Demonstration of a GaN‐spacer high electron mobility transistor with low alloy scattering
physica status solidi (a)·2005· 9 cited
SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL3/SF6 MIXTURES
2005· 8 cited
AlGaN/AIN/GaN High Electron Mobility Transistors with Improved Carrier Transport
2005· 1 cited
Proton-Induced Damage in Gallium Nitride-Based
2005
Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs
2004· 3 citedOpen Access
Use of multichannel heterostructures to improve the access resistance and f/sub T/ linearity in GaN-based HEMTs
2004· 8 citedOpen Access
Improved high power thick-GaN-capped AlGaN/GaN HEMTs without surface passivation
2004· 1 citedOpen Access
Al Ga N ∕ Ga N metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2004· 18 cited
SELECTIVE DRY ETCHING OF <font>GaN</font> OVER <font>AlGaN</font> IN <font>BCL</font><sub>3</sub>/<font>SF</font><sub>6</sub> MIXTURES
International Journal of High Speed Electronics and Systems·2004· 39 cited
High performance AlGaN/GaN HEMTs with a field plated gate structure
2004· 6 citedOpen Access
Power and Linearity Characteristics of Field-Plated Recessed-Gate AlGaN–GaN HEMTs
IEEE Electron Device Letters·2004· 96 citedOpen Access
Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design
Journal of Electronic Materials·2004· 23 citedOpen Access
page 1 of 3Next →

Frequent Co-authors

Umesh K. Mishra(33), S. Keller(27), Alessandro Chini(26), S. Heikman(24), R. Coffie(19), L. Shen(18), Steven P. DenBaars(12), Enrico Zanoni(12), A. Chakraborty(11), Gaudenzio Meneghesso(11), Tomás Palacios(8), Huili Grace Xing(7), L. McCarthy(7), Giacinta Parish(6), M. Maretto(4), Gilberto A. Umana‐Membreno(4), Brett Nener(4), Debdeep Jena(3), James S. Speck(3), G. Massari(3)