J. K. Furdyna

University of Notre Dame — United States

Materials Science · Physical Sciences

56h-index18.7kcitations743works2.22yr avg
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Research Topics

ZnO doping and properties(274), Semiconductor Quantum Structures and Devices(264), Magnetic properties of thin films(257), Magnetic and transport properties of perovskites and related materials(167), Quantum and electron transport phenomena(105)

Publications743 total

Spin–orbit fields induced by topological insulator in (Ga,Mn)As/Bi2Te3 heterostructures
Applied Physics Letters·2025
Tuning Rashba type spin–orbit field via Mn composition gradient engineering in (Ga,Mn)As ferromagnetic films
APL Materials·2025Open Access
Quantification of spin-orbit effective fields in (Ga,Mn)(As,P) ferromagnetic semiconductor films by second harmonic Hall voltage measurements
Physical review. B./Physical review. B·2025· 3 cited
Controlling Magnetization in Ferromagnetic Semiconductors by Current-Induced Spin-Orbit Torque
Materials·2025· 5 citedOpen Access
Current direction dependence of spin-orbit field in a crystalline ferromagnetic layer with perpendicular anisotropy
SSRN Electronic Journal·2025Open Access
Observation of field-free spin–orbit torque switching in a single crystalline (Ga,Mn)(As,P) ferromagnetic film with perpendicular anisotropy
APL Materials·2024· 4 citedOpen Access
Two-field measurements of spin-orbit-torque efficiency in crystalline (Ga,Mn)(As,P) ferromagnetic semiconductors
Physical review. B./Physical review. B·2024· 5 cited
Impact of Annealing on the Band Structure of (Ga,Mn) (P,As)
2024
Magnetization switching by spin-orbit torque in crystalline (Ga,Mn)(As,P) film deposited on a vicinal GaAs substrate
Physical review. B./Physical review. B·2024· 4 cited
Depolarization effects on spin-orbit torque magnetization switching in (Ga,Mn)(As,P) ferromagnetic semiconductor film
Applied Physics Letters·2024· 2 cited
Efficient Spin-Orbit Torque Magnetization Switching with Low Current Density in Crystalline Ferromagnetic Semiconductor
2024
Efficient Spin-Orbit Torque Magnetization Switching With Low Current Density in Crystalline Ferromagnetic Semiconductor
IEEE Transactions on Magnetics·2024· 3 cited
Room temperature persisting surface charge carriers driven by intense terahertz electric fields in a topological insulator Bi2Se3
APL Materials·2023· 8 citedOpen Access
Mn impurity band and the effects of Mn position in III–V lattice: Pivotal contributions of Władek Walukiewicz to the understanding of ferromagnetism in semiconductors
Journal of Applied Physics·2023· 6 citedOpen Access
Modification of Magnetic Semiconductors by Phosphorus Doping
2023
Field-free spin-orbit-torque switching of a single ferromagnetic layer with fourfold in-plane magnetic anisotropy
APL Materials·2023· 9 citedOpen Access
Band Engineering of Magnetic (Ga,Mn)As Semiconductors by Phosphorus Doping
IEEE Transactions on Magnetics·2023· 8 cited
Investigation of orthogonal spin–orbit fields in crystalline ferromagnetic films with four-fold in-plane magnetic anisotropy
APL Materials·2023· 12 citedOpen Access
Band engineering of magnetic semiconductors by phosphorus doping
2023
Effect of annealing on the magnetic anisotropy of GaMnAsP layers with graded P concentration
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2023· 3 cited
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Frequent Co-authors

X. Liu(18), M. Dobrowolska(10), Nitin Samarth(8), K. M. Yu(7), T. Wójtowicz(7), Xinyu Liu(7), W. Walukiewicz(6), Hongyu Luo(5), Yuji C. Sasaki(4), Sang‐Hoon Lee(4), H. Luo(4), Sergei Rouvimov(4), Hong‐Gang Luo(3), Jie Ding(3), Suresh Vishwanath(3), Debdeep Jena(3), Huili Grace Xing(3), Xinyu Liu(3), Leonid P. Rokhinson(2), Xinyu Liu(2)