Tatsuo Schimizu

Toshiba (Japan) — Japan

Engineering · Physical Sciences

12h-index477citations56works0.02yr avg
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Research Topics

Semiconductor materials and devices(25), Silicon Carbide Semiconductor Technologies(12), Surface and Thin Film Phenomena(12), Magnetic and transport properties of perovskites and related materials(9), Electronic and Structural Properties of Oxides(9)

Publications56 total

First-principles modeling of defect-free abrupt SiC/SiO<sub>2</sub> interfaces on <i>a</i>- and <i>m</i>-face 4H-SiC
Applied Physics Express·2018· 6 cited
Construction of 4H-SiC/SiO2 interface models on a- and m-faces by first-principles calculations
The Japan Society of Applied Physics·2018
Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability
Materials science forum·2018· 20 cited
First-principles study on C=C defects near SiC/SiO<sub>2</sub>interface: Defect passivation by double-bond saturation
Japanese Journal of Applied Physics·2018· 12 cited
First-Principles Molecular Dynamics Simulations of O 2 Oxidation in 4H-SiC/SiO 2 ~ Formation and Diffusion of C Clusters ~
The Japan Society of Applied Physics·2018
Hybrid density functional analysis of distribution of carbon-related defect levels at 4H-SiC(0001)/SiO<sub>2</sub> interface
Applied Physics Express·2017· 27 cited
A first principles study on the C=C defects near SiC/SiO&lt;sub&gt;2&lt;/sub&gt; interface: Defect passivation by double bond saturation
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials·2017
First-Principles Molecular Dynamics Simulations of NO Oxynitridation in 4H-SiC/SiO 2 ~Substitution Reaction between N and C at the Interface ~
The Japan Society of Applied Physics·2017
First-Principles Molecular Dynamics Simulations of O 2 Oxidation in 4H-SiC/SiO 2 ~Electronic Structures of C-related Defects at the Interface Region~
The Japan Society of Applied Physics·2017
First-Principles Molecular Dynamics Simulations of O 2 Oxidation in 4H-SiC/SiO 2 ~Differences between SiC(0001) Si and (000-1) C faces~
The Japan Society of Applied Physics·2016
4H-SiC Surface Structures and Oxidation Mechanism Revealed by Using First-Principles and Classical Molecular Dynamics Simulations
Materials science forum·2016· 10 cited
A theoretical study on the thermal oxidation of silicon carbide: Chemical species at the SiO$_{\mathrm{2}}$/SiC interface
Bulletin of the American Physical Society·2016
First-principles analysis on defect level distribution at 4H-SiC(0001)/SiO2
The Japan Society of Applied Physics·2016
First-Principles Molecular Dynamics Simulations of 4H-SiC Oxidation ~C-condensation and CO desorption through O 2 oxidation~
The Japan Society of Applied Physics·2016
Band engineering of silicon for light emission: First-principles approach to the effect of co-doping with nitrogen and fluorine
Solid State Communications·2009
Investigation of stability of the effective work function on LaAlO3 and La2Hf2O7
Journal of Applied Physics·2009· 9 cited
Control of electronic properties of HfO2 with fluorine doping from first-principles
Applied Surface Science·2008· 16 cited
Clarification of Additional Mobility Components associated with TaC and TiN Metal Gates in scaled HfSiON MOSFETs down to sub-1.0nm EOT
2007· 5 cited
Improvement of the electrical properties of La aluminates/Si (100) interface by insertion of one monolayer epitaxial SrSi2
IEICE Technical Report; IEICE Tech. Rep.·2007
Clarification ofAdditional Mobility Components associated withTaCandTiN MetalGatesinscaled HfSiONMOSFETsdowntosub-1.Onm EOT
2007
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Frequent Co-authors

Nobuo Tajima(12), Tomoaki Kaneko(11), Takahiro Yamasaki(11), Takahisa Ohno(10), Noburu Fukushima(8), Masaru Tsukada(7), Katsuyoshi Kobayashi(7), Jun Nara(6), Nobuyuki Isshiki(6), Koichi Kato(6), M. Tsukada(5), Satoshi Watanabe(5), Hiroyuki Kageshima(5), Jun Nara(5), Koichi Kato(4), Kazuhide Abe(4), Takashi Kawakubo(4), Hiroshi Kamimura(4), Masato Koyama(4), Takeshi Yamaguchi(4)