Noburu Fukushima

Jichi Medical University — Japan

Physics and Astronomy · Physical Sciences

22h-index1.6kcitations98works0.02yr avg
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Research Topics

Physics of Superconductivity and Magnetism(27), Magnetic and transport properties of perovskites and related materials(26), Semiconductor materials and devices(23), Advanced Condensed Matter Physics(22), Electronic and Structural Properties of Oxides(20)

Publications98 total

AI-Assisted Non-Invasive Assessment of Graft Inflammation and Fibrosis Using CT Imaging in Liver Transplant Recipients
American Journal of Transplantation·2025Open Access
How we learned to stop worrying and love the High-k.
The Japan Society of Applied Physics·2016
Cation and anion ordering in Sr<sub>2</sub>Si<sub>7</sub>Al<sub>3</sub>ON<sub>13</sub> phosphors
Journal of Materials Chemistry C·2015· 9 cited
What and how can industry expect of nanoelectronics
The Japan Society of Applied Physics·2014
Low Temperature Interconnection Process by Using Conductive Film for Crystalline Silicon Photovoltaic Modules
EU PVSEC·2013· 1 citedOpen Access
Aluminium Rear Emitter Large Area n-Type Cz-Si Solar Cells for Industrial Application
EU PVSEC·2010· 8 citedOpen Access
La Al O 3 gate dielectric with ultrathin equivalent oxide thickness and ultralow leakage current directly deposited on Si substrate
Journal of Applied Physics·2008· 50 cited
Improvement of the electrical properties of La aluminates/Si (100) interface by insertion of one monolayer epitaxial SrSi2
IEICE Technical Report; IEICE Tech. Rep.·2007
Control of Electronic Properties of High-k Gate Oxides with Doping from First-principles Calculation
AIP conference proceedings·2007
Ultra-Thin (EOT ~ 0.31nm) and Low Leakage Dielectrics of La-Aluminate Deposited Directly on Si Substrate
ECS Transactions·2006· 1 cited
Ultra-Thin (EOT ~ 0.31nm) and Low Leakage Dielectrics of La-Aluminate Deposited Directly on Si Substrate
ECS Meeting Abstracts·2006
Ultra-thin (EOT=3&amp;#x212B;) and low leakage dielectrics of La-alminate directly on si substrate fabricated by high temperature deposition
2006· 13 cited
Reproducible and High-Resolution Analysis on Ultra-Shallow-Junction CMOSFETs by Scanning Spreading Resistance Microscopy
2006· 3 cited
High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi2
2006
Effect of gas flow ratio in PE-CVD on elastic properties of sub-micron thick silicon nitride films for MEMS
2005· 1 cited
Thermochernical understanding of dielectric breakdown in HfSiON with current acceleration
2005· 13 cited
Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
2005· 2 cited
Band diagram and carrier conduction mechanisms in ZrO/sub 2/ MIS structures
IEEE Transactions on Electron Devices·2004· 21 cited
Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO<sub>2</sub> Directly Grown on Si(111)
Japanese Journal of Applied Physics·2004· 9 cited
Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
2004· 1 cited
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Frequent Co-authors

Ken Ando(13), Kazuhide Abe(11), Hiromi Niu(11), Takeshi Yamaguchi(9), Hideki Satake(9), Takashi Kawakubo(7), Shiro Takeno(6), Naoko Yanase(5), Shigenori Tanaka(5), Shin Nakamura(4), Yukie Nishikawa(4), Masahiko Yoshiki(4), Mitsuaki Izuha(4), Shuichi Komatsu(4), Kenya Sano(4), Tatsuo Schimizu(4), Masaru Hayashi(3), Yutaka Yamada(3), Hisashi Yoshino(3), S. Murase(3)