J. Holleman

Engineering · Physical Sciences

16h-index867citations180works0.02yr avg
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Research Topics

Semiconductor materials and devices(83), Thin-Film Transistor Technologies(59), Silicon and Solar Cell Technologies(35), Silicon Nanostructures and Photoluminescence(33), Copper Interconnects and Reliability(22)

Publications180 total

A Comparative Study of Cyclotron Decay in Two-dimensional Electron Gas Samples.
Bulletin of the American Physical Society·2017
TFTs as photodetectors for optical interconnects
University of Twente Research Information·2009· 1 citedOpen Access
Low-Temperature Fabricated TFTs on Polysilicon Stripes
IEEE Transactions on Electron Devices·2009· 19 citedOpen Access
Antifuse injectors for SOI LEDs
University of Twente Research Information·2008
Deposition of High-Quality SiO2 Insulating Films at Low Temperatures by means of Remote PECVD
Data Archiving and Networked Services (DANS)·2008
Light emission from silicon nanocrystals embedded in ALD-alumina at low temperatures
University of Twente Research Information·2008Open Access
Silicon based light emitters utilizing radiation from dislocations; electric field induced shift of the dislocation-related luminescence
Physica E Low-dimensional Systems and Nanostructures·2008· 2 citedOpen Access
SOI-LEDs with Carrier Confinement
Materials science forum·2008
On the switching speed of SOI LEDs
University of Twente Research Information·2008· 2 citedOpen Access
Poly-Si stripe TFTs by grain-boundary controlled crystallization of amorphous-Si
2008· 6 cited
Silicon LEDs with antifuse injection
2008· 8 cited
Low-Temperature SiO[sub 2] Layers Deposited by Combination of ECR Plasma and Supersonic Silane/Helium Jet
Journal of The Electrochemical Society·2007· 7 citedOpen Access
Simulation of a Nanolink Hot-Plate Device
University of Twente Research Information·2007Open Access
Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD
Data Archiving and Networked Services (DANS)·2007· 2 cited
Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect
Applied Physics Letters·2007· 11 cited
Engineering of Dislocation-Loops for Light Emission from Silicon Diodes
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2007Open Access
Engineering of Dislocation-Loops for Light Emission from Silicon Diodes
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2007· 4 cited
Influence of Interface Recombination in Light Emission from Lateral Si-Based Light Emitting Devices
ECS Transactions·2007· 1 cited
Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs
IEEE Electron Device Letters·2007· 6 cited
Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes
IEEE Transactions on Electron Devices·2007· 24 cited
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Frequent Co-authors

Jurriaan Schmitz(22), Alexey Y. Kovalgin(15), Ihor Brunets(9), P.H. Woerlee(8), P. LeMinh(8), A. Boogaard(8), Hans Wallinga(6), R.A.M. Wolters(6), J. Middelhoek(5), A. Hasper(4), Cora Salm(4), Vincent Houtsma(4), Tù Hoang(4), J.F. Verweij(4), Antonius A. I. Aarnink(4), Thai Thanh Hoang Thi(4), Chris R. Kleijn(3), Albert van den Berg(3), Gratiela Isai(3), Teimuraz Mchedlidze(3)