T. Tsurushima

Kyushu University — Japan

Engineering · Physical Sciences

14h-index550citations69works0.02yr avg
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Research Topics

Semiconductor materials and devices(25), Ion-surface interactions and analysis(25), Silicon and Solar Cell Technologies(20), Semiconductor materials and interfaces(19), Integrated Circuits and Semiconductor Failure Analysis(14)

Publications68 total

Compliant bump technology for back-side illuminated CMOS image sensor
2009· 2 cited
The X-ray microscopy project at Saga SLS
Journal de Physique IV (Proceedings)·2003· 1 cited
Narrow CoSi/sub 2/ line formation on SiO/sub 2/ by focused ion beam
2002· 1 cited
Silicon fine structure formation on sapphire with focused ion beam
2002· 1 cited
The X-ray microscopy project at saga SLS
Springer Link (Chiba Institute of Technology)·2002
High-Performance MOS Tunneling Cathode with CoSi<sub>2</sub> Gate Electrode
Japanese Journal of Applied Physics·2001· 1 cited
CONCEPTUAL DESIGN STUDY OF X-RAY MICROSCOPY BEAMLINE AT THE SAGA SYNCHROTRON LIGHT SOURCE
2001
Effects of ion irradiation on silicon oxidation in electron cyclotron resonance argon and oxygen mixed plasma
Journal of Applied Physics·2000· 14 cited
High Performance MOS Tunneling Cathode with CoSi2 Gate Electrode
2000
Resistance Increase in CoSi_2 Layer by Irradiation Induced Damage
Kyushu University Institutional Repository (QIR) (Kyushu University)·1999Open Access
Formation of CoSi2 gate electrode for MOS electron tunneling emitters
1999
Ion-beam modification of TiO2 film to multilayered photocatalyst
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1999· 39 citedOpen Access
ECR Plasma Oxidation: Dependence on Energy of Argon Ion
MRS Proceedings·1999· 1 cited
Narrow CoSi, Line Formation on SiO, by Focused Ion Beam
1999
Thin CoSi<sub>2</sub> Formation on SiO<sub>2</sub> with Low-Energy Ion Irradiation
Japanese Journal of Applied Physics·1998· 4 cited
Fabrication and Characterization of CoSi_2 Gate MOS Tunnel Structure
Kyushu Daigaku Daigakuin shisutemu joho kagaku kiyo/Research reports on information science and electrical engineering·1998
Annealing Effects on Transition Region at Si-SiO_2 Interface
1997
Effect of preoxidation on deposition of thin gate-quality silicon oxide film at low temperature by using a sputter-type electron cyclotron resonance plasma
Journal of Applied Physics·1997· 31 cited
Growth kinetics of CoSi formed by ion beam irradiation at room temperature
Journal of Applied Physics·1997· 15 cited
Deposition of High-Quality Silicon Oxynitride Film at Low Temperature by Using a Sputtering-Type Electron Cyclotron Resonance Plasma
Japanese Journal of Applied Physics·1997· 2 cited
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Frequent Co-authors

Taizoh Sadoh(21), H. Tanoue(19), Yunosuke Makita(8), Atsushi Kenjo(7), Toshihiko Kanayama(6), Akira Baba(5), Hiroshi Nakashima(5), H. Nakashima(4), Dawei Gao(4), Kuniyuki Furukawa(4), Shun‐ichi Gonda(4), Shigeru Maekawa(4), Y. Kashiwazaki(3), H. Nakashima(3), D.-J. Bai(3), Hiroshi Nakashima(3), Hidetoshi Nojiri(3), Junichi Shimada(3), A. Matsushita(3), H. Mori(2)