H. Tanoue

National Institutes of Natural Sciences — Japan

Engineering · Physical Sciences

25h-index1.9kcitations185works0.02yr avg
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Research Topics

Semiconductor materials and devices(70), Integrated Circuits and Semiconductor Failure Analysis(58), Ion-surface interactions and analysis(46), Semiconductor materials and interfaces(43), Silicon and Solar Cell Technologies(29)

Publications185 total

Feasibility study of fast ion loss diagnostics for CFQS by beam ion loss calculation on vacuum vessel
Journal of Instrumentation·2021· 4 cited
MAGNETIC AND STRUCTURAL STUDIES OF FeSi MULTILAYERS IRRADIATED BY ARGON IONS
Jurnal Sains Materi Indonesia·2019Open Access
STRUCTURAL AND MAGNETIC PROPERTIES OF FE/SI MULTILAYER GROWN BY HELICON PLASMA SPUTTERING
Jusami | Indonesian Journal of Materials Science·2019
Doping of β-FeSi<sub>2</sub>Thin Film with Aluminum Prepared by Molecular Beam Epitaxy
Applied Physics Express·2008· 3 cited
Temperature-dependent growth and transient state of hydrogen-induced nanocavities in silicon
Journal of Applied Physics·2008· 6 cited
Effect of a Fe3Si buffer layer for the growth of semiconducting β-FeSi2 thin film on stainless steel substrate
Journal of Crystal Growth·2007· 14 cited
Formation of β-FeSi2 thin films on non-silicon substrates
Thin Solid Films·2006· 11 cited
HfC-FEA controlled by built-in poly-Si TFT
2006
Parameter dispersion characterization for arrays of HfC-coated emitters on poly-Si substrate
2006
Parameter dispersion characterization for arrays of HfC-coated emitters on poly-Si substrate
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2006· 4 cited
HfC field emitter array controlled by built-in poly-Si thin film transistor
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2006· 18 cited
Doping integrity diagnostics of planar transistor channel structures by scanning nonlinear dielectric microscopy
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2006Open Access
β-FeSi2 based metal-insulator-semiconductor devices formed by sputtering for optoelectronic applications
Materials Science and Engineering B·2005· 13 cited
Demonstration, Analysis, and Device Design Considerations for Independent DG MOSFETs
IEEE Transactions on Electron Devices·2005· 130 cited
A thin-film solar cell of high-quality <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si3.gif" overflow="scroll"><mml:mrow><mml:mrow><mml:mi mathvariant="normal">β</mml:mi></mml:mrow></mml:mrow></mml:math>-FeSi2/Si heterojunction prepared by sputtering
Solar Energy Materials and Solar Cells·2005· 93 cited
Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy
Japanese Journal of Applied Physics·2005· 2 cited
Fabrication and characterization of vertical-type, self-aligned asymmetric double-gate metal-oxide-semiconductor field-effect-transistors
Applied Physics Letters·2005· 10 cited
On the V/sub th/ controllability for 4-terminal double-gate MOSFETs
2005
Generation of an intense pulsed heavy-ion beam by a<i>B</i><i><sub>y</sub></i>-type, magnetically insulated ion diode with an active ion source
Plasma devices and operations·2005· 3 cited
Arsenic Doping of n-Type β-FeSi<sub>2</sub> Films by Sputtering Method
Japanese Journal of Applied Physics·2005· 7 cited
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Frequent Co-authors

Yunosuke Makita(14), S. Kanemaru(10), Naotaka Otogawa(9), Masato Osamura(9), Yasuhiro Fukuzawa(9), Teruhisa Ootsuka(9), Yasuhiko Nakayama(9), Zheng-Xin Liu(8), Yasuhito Suzuki(7), Takahiro Mise(6), Toshihiko Kanayama(6), T. Tsurushima(6), Meishoku Masahara(5), Takashi Matsukawa(5), R. Kuroda(5), Shinan Wang(5), Takayuki Hirano(5), Shun‐ichi Gonda(5), Yongxun Liu(4), Kunihiro Sakamoto(3)