Takashi Matsukawa

National Institute of Advanced Industrial Science and Technology — Japan

Engineering · Physical Sciences

30h-index3.8kcitations491works0.02yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(371), Advancements in Semiconductor Devices and Circuit Design(311), Integrated Circuits and Semiconductor Failure Analysis(153), Ferroelectric and Negative Capacitance Devices(67), Silicon Carbide Semiconductor Technologies(47)

Publications491 total

Cryogenic Characterization of Low-frequency Noise Based on Cryo-CMOS: Impact of Interface Trap Density
Bulletin of the American Physical Society·2021
Designing a bileg silicon-nanowire thermoelectric generator with cavity-free structure
Japanese Journal of Applied Physics·2021· 15 cited
Experimental Demonstration of Bileg Silicon-nanowire Thermoelectric Generator with Cavity-free Structure
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials·2020· 1 cited
Estimation of Seebeck Coefficient of Si Wire Laterally Lying on Oxide-Covered Substrate
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials·2020
4-4 Effect of Unit-cell Arrangement on Performance of Multi-stage-planar Cavity-free Unileg Thermoelectric Generator Using Silicon Nanowires
2020· 3 cited
Impact of Switching Voltage on Complementary Steep-Slope Tunnel Field Effect Transistor Circuits
IEEE Transactions on Electron Devices·2020· 3 cited
Understanding the Origin of Cryogenic 1/ f Noise by Utilizing Cryo-CMOS
The Japan Society of Applied Physics·2020
Development of Liquid TEM Cell Fabrication Process Using Minimal Fab Tools
The Japan Society of Applied Physics·2020
Effect of the Thermal Boundary Resistance in Metal/Dielectric Thermally Conductive Layers on Power Generation of Silicon Nanowire Microthermoelectric Generators
ACS Applied Materials & Interfaces·2020· 14 cited
Toward Long-Coherence-Time Si Spin Qubit: The Origin of Low-Frequency Noise in Cryo-CMOS
2020· 25 cited
Source engineering for bilayer tunnel field-effect transistor with hetero tunnel junction: thickness and impurity concentration
Applied Physics Express·2020· 7 cited
(Invited) Development of CMOS-MEMS Cointegrated Pressure Sensor Using Minimal Fab Process
ECS Meeting Abstracts·2020· 1 cited
(Invited) Development of CMOS-MEMS Cointegrated Pressure Sensor Using Minimal Fab Process
ECS Transactions·2020· 4 cited
Effect of Thermal Boundary Resistance between the Interconnect Metal and Dielectric Interlayer on Temperature Increase of Interconnects in Deeply Scaled VLSI
ACS Applied Materials & Interfaces·2020· 25 cited
Digital Type CMOS-MEMS Cointegrated Pressure Sensor Fabricated Using Cost-Effective Minimal-Fab Process
2020· 1 cited
p-Channel TFET Operation of Bilayer Structures With Type-II Heterotunneling Junction of Oxide- and Group-IV Semiconductors
IEEE Transactions on Electron Devices·2020· 24 cited
Performance Comparison between Single- and Poly-crystalline Si Nanowire for Planar Thermoelectric Generator
The Japan Society of Applied Physics·2020
Seebeck Coefficient Measurement of Si Wire directly laid on substrate
The Japan Society of Applied Physics·2020
Improvement in Electrical Characteristics of ZnSnO/Si Bilayer TFET by W/Al₂O₃ Gate Stack
IEEE Journal of the Electron Devices Society·2020· 4 citedOpen Access
Demonstration of n- and p-TFET operations in a single ZnSnO/SiGe bilayer structure
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials·2019
page 1 of 25Next →

Frequent Co-authors

Meishoku Masahara(28), Yongxun Liu(25), Kazuhiko Endo(25), S. O’uchi(22), Kunihiro Sakamoto(15), Junichi Tsukada(15), Hiromi Yamauchi(13), Yuki Ishikawa(12), Kenichi Ishii(8), Eiichi Suzuki(8), Shinji Migita(8), Yukinori Morita(8), Hiroyuki Ota(8), H. Yamauchi(7), Wataru Mizubayashi(7), S. Kanemaru(6), E. Suzuki(6), Takahiro Mori(6), K. Ishii(5), Atsushi Ogura(5)