Kunihiro Sakamoto

Advanced Power Electronics (United States) — United States

Engineering · Physical Sciences

32h-index3.5kcitations382works3.02yr avg
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Research Topics

Semiconductor materials and devices(156), Advancements in Semiconductor Devices and Circuit Design(129), Integrated Circuits and Semiconductor Failure Analysis(48), Semiconductor materials and interfaces(41), Silicon Carbide Semiconductor Technologies(34)

Publications382 total

Innovative design of a compact nanosecond-pulse power supply using SiC-MOSFETs for enhanced dielectric barrier discharge plasma actuators
Review of Scientific Instruments·2025· 3 cited
The Critical Role of Meflin-Positive Fibroblasts Against Acute Lung Injury
2022
A Novel Type of V-Trench SiC-MOSFET and an Improved High-Power Single-Ended Inverter for very Low Loss Operation
2022 International Conference for Advancement in Technology (ICONAT)·2022
Development of compact inductive energy storage pulsed-power generator driven by 13 kV SiC-MOSFET
Review of Scientific Instruments·2021· 9 cited
A New Type of Kelvin-Source SiC-VMOSFET for a High-Power Single-Ended Wireless EV Charger
2020· 2 cited
SiC module operational at 200 °C with high power-cycling capability using fatigue-free chip surface packaging technologies
PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management·2020· 1 cited
Novel Type of High-Power Low-Loss WPT with a new WBG Power Device
Journal of the Japan Institute of Power Electronics·2020
An ultra-compact low-cost single-ended wireless EV charger with a newly developed SiC-VMOSFET
Journal of the Japan Institute of Power Electronics·2020
A New V-MOSFET High-Power Single-Ended WPT system with International-Standard Operating Frequency
2019
A Study of a Newly Developed Kelvin-Source Driven SiC-VMOSFET on a High-Power Single-Ended Wireless EV Charger
2019· 11 cited
Electrical Characteristics of 3.3 kV SiC-MOSFET and Development of Inductive Energy Storage Pulsed Power Generator
IEEJ Transactions on Fundamentals and Materials·2019
Study of SiC device for pulsed power switching circuit
Electrical Engineering in Japan·2019· 1 citedOpen Access
Study of SiC Device for Pulsed Power Switching Circuit
IEEJ Transactions on Fundamentals and Materials·2019
A High-Power Miniaturized Wireless EV Charger with a New SiC-VMOSFET driven Single-Ended Inverter
2019· 1 cited
A Method of Energy Recovery Switching for Pulsed Power Using Sic-Mosfet
2019
Development of a Pulsed Power Supply Utilizing 13 kV Class SiC-MOSFET
JACOW·2019· 1 citedOpen Access
Progress in High and Ultrahigh Voltage Silicon Carbide Device Technology
2018· 9 cited
Characterization of Thermally Oxidized SiO<sub>2</sub>/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-Ray Photoelectron Spectroscopy (XPS) and High-Resolution Rutherford Backscattering Spectroscopy (HR-RBS)
Materials science forum·2016
Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C–V Measurement
Materials science forum·2016· 9 cited
Electrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO<sub>2</sub>/4H-SiC(0001) and
Japanese Journal of Applied Physics·2016· 10 cited
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Frequent Co-authors

Meishoku Masahara(15), Yongxun Liu(15), Takashi Matsukawa(14), Kazushi Miki(13), Kazuhiko Endo(12), Tsunenori Sakamoto(10), S. O’uchi(10), Junichi Tsukada(10), T. Sakamoto(8), H. Yamauchi(7), Hiromi Yamauchi(7), E. Suzuki(6), Yuki Ishikawa(6), K. Ishii(5), T. Sekigawa(5), T. Abukawa(4), Shigeru Sato(4), S. Kono(4), H. Tanoue(3), S. Kanemaru(3)