Tsunenori Sakamoto

Engineering · Physical Sciences

21h-index1.3kcitations61works0.02yr avg
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Research Topics

Semiconductor materials and devices(25), Semiconductor materials and interfaces(18), Semiconductor Quantum Structures and Devices(15), Electron and X-Ray Spectroscopy Techniques(14), Surface and Thin Film Phenomena(14)

Publications61 total

Conducting atomic force microscopy studies on local electrical properties of ultrathin SiO2 films
Applied Surface Science·2000· 27 cited
Characterization of ultrathin SiOx layers formed on a spatially controlled atomic-step-free Si(001) surface
Applied Surface Science·1999· 3 cited
Oxidation of spatially controlled atomically flat Si(001) surface
Applied Surface Science·1998· 6 cited
Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
Japanese Journal of Applied Physics·1998· 3 cited
Is the c(4×4) reconstruction of Si(001) associated with the presence of carbon?
Applied Physics Letters·1997· 46 cited
Local structures of isovalent and heterovalent dilute impurities in Si crystal probed by fluorescence x-ray absorption fine structure
Journal of Applied Physics·1997· 27 citedOpen Access
Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
Japanese Journal of Applied Physics·1997· 10 cited
Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
1997
Local structures of isovalent and heterovalent dilute impurities in Si crystal probed by fluorescence x-ray absorption fine structure
Nihon Kessho Gakkaishi·1997Open Access
Adsorption and desorption of atomic hydrogen on Si(001) and its effects on Si MBE
Elsevier eBooks·1996
Adsorption and desorption of atomic hydrogen on Si(001) and its effects on Si MBE
Journal of Crystal Growth·1995· 17 cited
Elongated dimer structure for Ge overlayers on Si(001): symmetric or asymmetric?
Journal of Crystal Growth·1995· 4 cited
Evidence for strain-induced surface rearrangement: Ge epitaxial overlayers on Si(0 0 1)
Physica B Condensed Matter·1995· 4 cited
Ge Epitaxial Overlayers on Si(001) Studied by Surface-Sensitive X-Ray Absorption Fine Structure: Evidence for Strain-Induced Surface Rearrangement
Japanese Journal of Applied Physics·1994· 30 cited
Abrupt Si/Ge/Si(001) Interfaces Fabricated with Bi as a Surfactant
Japanese Journal of Applied Physics·1994· 35 cited
Interface-Mixing in Ge Heteroepitaxy on Si(001):Microscopic Mechanism
1994
Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? –Bi as a Surfactant with Small Self-Incorporation–
Japanese Journal of Applied Physics·1993· 90 cited
Effect of surfactants on surface migration in Si MBE
Journal of Crystal Growth·1993· 27 cited
V-Shaped Gate High Electron Mobility Transistor (VHEMT)
Japanese Journal of Applied Physics·1993· 1 cited
Microstructure and Optical Properties of Si/Ge Strained-Layer Superlattice.
Nihon Kessho Gakkaishi·1993Open Access
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Frequent Co-authors

Kunihiro Sakamoto(31), Kazushi Miki(25), H. Ōyanagi(8), Hirofumi Matsuhata(7), Atsushi Ando(6), Kazuhiko Matsumoto(6), Hitoshi Kawanami(5), Ken'ichi Kyoya(4), Yoshio Komiya(4), Yasuo Tarui(4), Hajime Okumura(4), Sadafumi Yoshida(4), Kimihiro Ohta(3), Tadashi Nakagawa(3), Naoyuki J. Kawai(3), Takeshi Kojima(3), R. Shioda(3), Kumiko Asami(3), Shun‐ichi Gonda(3), Gen Hashiguchi(2)