Hirofumi Matsuhata

Innovative Energy Solution (United States) — United States

Engineering · Physical Sciences

27h-index3.3kcitations195works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(68), Semiconductor materials and devices(39), Semiconductor Quantum Structures and Devices(35), Semiconductor materials and interfaces(33), Silicon and Solar Cell Technologies(32)

Publications195 total

Atomic and electronic structure of stacking faults on the {11¯02}$\{ {1\bar 102} \}$ plane in 4H‐SiC
Journal of the American Ceramic Society·2025Open Access
Evaluations of the microstructures at the interface between the semipolar (1013) AlN epilayer and the <i>m</i>-plane (1010) sapphire substrate
CrystEngComm·2023
Behaviours of the lattice-polarity inversion in AlN growth on c-Al<sub>2</sub>O<sub>3</sub> (0001) substrates by ammonia-free high temperature metalorganic chemical vapor deposition
CrystEngComm·2022· 4 cited
Oxygen atom ordering on SiO2/4H-SiC {0001} polar interfaces formed by wet oxidation
Acta Materialia·2021· 11 cited
Characterizations of microstructures in AlN hetero-epitaxial films grown by ammonia-free high-temperature MOVPE
The Japan Society of Applied Physics·2021
Bloch-wave interpretations of Gjønnes–Moodie lines in convergent-beam electron diffraction for non-symmorphic space-group crystals
Acta Crystallographica Section A Foundations and Advances·2021
Analysis on the Shapes of the Shockley type Stacking Faults Generated by the REDG Effect in the 4H-SiC Power Devices
Nihon Kessho Gakkaishi·2020Open Access
Advanced Characterization Nanotechnology Platform, the University of Tokyo
Materia Japan·2019Open Access
Morphology of single Shockley-type stacking faults generated by recombination enhanced dislocation glide in 4H–SiC
The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics·2018· 21 cited
One-angstrom-resolution element mapping by phase contrast ARHVEM technique
2018
Investigation of V-shaped extended defects in a 4H–SiC epitaxial film
The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics·2017· 11 cited
Surface defects generated by extrinsic origins on 4H-SiC epitaxial-wafers observed by scanning electron microscopy
Microscopy·2016· 7 cited
Surface defects generated by intrinsic origins on 4H-SiC epitaxial wafers observed by scanning electron microscopy
Microscopy·2016· 6 cited
Structural analysis of the 3C|4H boundaries formed on prismatic planes in 4H-SiC epitaxial films
Journal of Crystal Growth·2016· 12 cited
Effects of Basal Plane Dislocation Density in 4H-SiC Substrate on Degradation of Body-Diode Forward Voltage
Materials science forum·2016· 17 cited
Micro-structural analysis of local damage introduced in subsurface regions of 4H-SiC wafers during chemo-mechanical polishing
Journal of Applied Physics·2016· 34 cited
Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes
Journal of Applied Physics·2016· 99 cited
Characteristic morphologies of triangular defects on Si-face 4H-SiC epitaxial films
Journal of Crystal Growth·2015· 14 cited
Synchrotron X-ray topography analysis of local damage occurring during polishing of 4H-SiC wafers
Japanese Journal of Applied Physics·2015· 20 cited
Structural and Electrical Characterization of the Initial Stage of Physical Vapor Transport Growth of 4H-SiC Crystals
Materials science forum·2015· 2 cited
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Frequent Co-authors

Hajime Okumura(13), Takashi Sekiguchi(9), Mutsuo Ogura(8), Chul‐Ho Lee(7), Bin Chen(7), Makoto Kitabatake(7), T. Ito(6), Xue‐Lun Wang(6), Hiroshi Yamaguchi(6), Akimasa Kinoshita(6), Akira Iyo(5), Kunihiro Kihou(5), Kenji Fukuda(5), Hideki Sako(5), Takasumi Ohyanagi(5), Kunihiro Sakamoto(4), Kentaro Tamura(4), Junji Senzaki(4), Hiroshi Eisaki(3), Yoshiyuki Yoshida(3)