C.-Y. Liao

National Taiwan Normal University — Taiwan

Engineering · Physical Sciences

13h-index627citations47works0.62yr avg
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Research Topics

Ferroelectric and Negative Capacitance Devices(31), Semiconductor materials and devices(25), MXene and MAX Phase Materials(18), Advanced Memory and Neural Computing(12), Ferroelectric and Piezoelectric Materials(4)

Publications47 total

SLAM-Based Performance Evaluation of Industrial Robotic Arms <sup>*</sup>
2025
Effect of goal setting, attentional focus, and feedback on resistance training: Stage 1 registered report of a factorial randomized controlled trial
Psychology of sport and exercise·2025
High Dielectric Constant of HfO<sub>2</sub> Technology for Memory Applications
2025
Identical Pulse With Opposite Polarity Assistance Detrapping—Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse
IEEE Transactions on Electron Devices·2024· 2 cited
Enhancing the Extended Kalman Filter with Bio-inspired Algorithms for Battery SOC Estimation
2024· 1 cited
Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO2 gate stack scaling down
Applied Physics Letters·2022· 9 cited
Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO<sub>2</sub> Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance
2022 International Electron Devices Meeting (IEDM)·2022· 12 cited
Superlattice HfO<sub>2</sub>-ZrO<sub>2</sub> based Ferro-Stack HfZrO<sub>2</sub> FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10<sup>9</sup> cycles for Multibit NVM
2022 International Electron Devices Meeting (IEDM)·2022· 16 cited
Demonstration of Ultra-thin Sub-10 nm Indium Oxide (In&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;) Field-Effect-Transistors (FETs) by Sputtering Deposition with Annealing-Free Toward BEOL Memory Applications
2022
Nanosecond Laser Annealing Based Wake-up of Ferroelectric HfZrO&lt;sub&gt;2&lt;/sub&gt; Capacitors for BEOL Compatible and High Throughput FeRAM
2022
Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture
IEEE Electron Device Letters·2022· 8 cited
Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf₀.₁Zr₀.₉O₂
IEEE Electron Device Letters·2022· 5 cited
Endurance &gt; 10<sup>11</sup> Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO<sub>2</sub> to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)·2022· 21 cited
Characterization of Double HfZrO<sub>2</sub> based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory
2022· 3 cited
Correlation between Access Polarization and High Endurance (˜ 10<sup>12</sup> cycling) of Ferroelectric and Anti-Ferroelectric HfZrO<sub>2</sub>
2022 IEEE International Reliability Physics Symposium (IRPS)·2022· 11 cited
Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf1−xZrxO2 Diodes
Nanomaterials·2021· 8 citedOpen Access
Unipolar Switching based Antiferroelectric HfZrO&lt;sub&gt;2&lt;/sub&gt; Diode beyond Endurance &gt; 10&lt;sup&gt;11&lt;/sup&gt; Cycles with Low Operation Voltage for FeRAM Application
2021
Bilayer-Based Antiferroelectric HfZrO<sub>2</sub> Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory
IEEE Electron Device Letters·2021· 30 cited
Deep insights into Interface Effects to achieve Low-voltage Operation (&lt;1.2V), Low Process Temperature, and First-Principle Calculation
2021· 2 cited
Atomic Layer Deposition Plasma-Based Undoped-HfO<sub>2</sub> Ferroelectric FETs for Non-Volatile Memory
IEEE Electron Device Letters·2021· 23 cited
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Frequent Co-authors

M. H. Lee(34), K.-Y. Hsiang(22), Ming-Han Liao(15), Zaizhu Lou(8), W.-C. Ray(8), K.-T. Chen(7), G.-Y. Siang(7), Fan-Chun Hsieh(7), S.-H. Chang(7), C. W. Liu(7), Chun‐Yu Lin(7), Chieh Lo(6), S.-H. Chiang(6), T.-C. Chen(6), Tuo‐Hung Hou(6), F.-S. Chang(6), Hsin-Chin Chen(5), Shu-Tong Chang(5), Jun Liu(5), Y.-Y. Lin(5)