K.-T. Chen

National Taiwan Normal University — Taiwan

Engineering · Physical Sciences

10h-index453citations17works0.02yr avg
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Research Topics

Semiconductor materials and devices(8), Ferroelectric and Negative Capacitance Devices(8), MXene and MAX Phase Materials(6), Ferroelectric and Piezoelectric Materials(2), Quantum Dots Synthesis And Properties(2)

Publications17 total

Capacitance matching by optimizing the geometry of a ferroelectric HfO2-based gate for voltage amplification
Journal of Computational Electronics·2021· 3 cited
Ferroelectric HfZrO<sub>2</sub> With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training
IEEE Transactions on Electron Devices·2020· 53 cited
Double Layers Omega FETs with Ferroelectric HfZrO<sub>2</sub> for One-Transistor Memory
2020· 2 cited
Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Negative Capacitance FETs
2019· 10 cited
Ferroelectric HfZrO2 FETs for steep switch onset
Microelectronic Engineering·2019· 12 cited
Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO<sub>2</sub> Capacitor with Molybdenum Capping Electrode
2019 Electron Devices Technology and Manufacturing Conference (EDTM)·2019· 22 cited
Non-Volatile Ferroelectric FETs Using 5-nm Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> With High Data Retention and Read Endurance for 1T Memory Applications
IEEE Electron Device Letters·2019· 115 cited
Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs
2018· 45 cited
Metal insulator semiconductor field effect transistors with thin strained Ge film
Thin Solid Films·2016
Impact of strain on hole mobility in the inversion layer of PMOS device with SiGe alloy thin film
Thin Solid Films·2015· 4 cited
Aspect Ratio Effect on Multiple Flow Solutions in a Two-Sided Parallel Motion Lid-Driven Cavity
Journal of Mechanics·2014· 18 citedOpen Access
Multiplicity of steady solutions in a two-sided lid-driven cavity with different aspect ratios
Theoretical and Computational Fluid Dynamics·2013· 22 cited
Light‐Emitting Devices: Resonant‐Enhanced Full‐Color Emission of Quantum‐Dot‐Based Display Technology Using a Pulsed Spray Method (Adv. Funct. Mater. 24/2012)
Advanced Functional Materials·2012· 4 cited
Resonant‐Enhanced Full‐Color Emission of Quantum‐Dot‐Based Display Technology Using a Pulsed Spray Method
Advanced Functional Materials·2012· 120 cited
An intelligent approach to the discovery of luminescent materials using a combinatorial approach combined with Taguchi methodology
Luminescence·2011
An intelligent approach to the discovery of luminescent materials using a combinatorial approach combined with Taguchi methodology
Luminescence·2011· 3 cited
An intelligent approach to the discovery of luminescent materials using a combinatorial approach combined with Taguchi methodology
Luminescence·2011· 20 cited

Frequent Co-authors

M. H. Lee(9), C.-Y. Liao(7), G.-Y. Siang(6), Ming-Han Liao(6), Hsin-Chin Chen(5), Chieh Lo(5), Shu-Tong Chang(5), Y.-Y. Lin(4), C.-Y. Chueh(4), Chih‐Wei Chang(4), Yi‐Ju Tseng(4), Y.-J. Yang(4), Cheng‐I Chu(3), Po‐Yuan Chen(3), Ru‐Shi Liu(3), Fan-Chun Hsieh(3), Hsin‐Chu Chen(2), Kai‐An Tsai(2), Chien‐Chung Lin(2), Hsin‐Han Tsai(2)