P. Castrillo

Engineering · Physical Sciences

19h-index1.2kcitations79works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(36), Semiconductor Quantum Structures and Devices(34), Semiconductor materials and interfaces(27), Semiconductor materials and devices(22), Advancements in Semiconductor Devices and Circuit Design(13)

Publications79 total

REDUCED-SCALE MODELS AS STRATEGY FOR IMPROVING THE UNDERGRADUATE LEARNING PROCESS IN THE FIELD OF STRUCTURAL ENGINEERING
INTED proceedings·2022
Kinetic Monte Carlo simulation of phase-precipitation versus instability behavior in short period FeCr superlattices
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2016· 2 citedOpen Access
Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion
2016· 1 citedOpen Access
Enhanced calculation of eigen-stress field and elastic energy in atomistic interdiffusion of alloys
Computer Physics Communications·2016· 3 cited
Quasi-atomistic modeling of the microstructure evolution in binary alloys and its application to the FeCr case
Acta Materialia·2015· 20 cited
Modeling of boron diffusion in silicon–germanium alloys using Kinetic Monte Carlo
Solid-State Electronics·2014· 2 cited
Atomistic modelling and simulation of arsenic diffusion including mobile arsenic clusters
physica status solidi (a)·2013· 1 cited
Effective electrical resistance due to current-induced heat flow in thermoelectric generators
2013· 2 cited
Process modeling of chemical and stress effects in SiGe
AIP conference proceedings·2012· 4 cited
Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation
Journal of Applied Physics·2011· 29 cited
Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency
Physical Review B·2010· 13 citedOpen Access
Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures
Thin Solid Films·2009· 7 cited
The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy
Materials Science and Engineering B·2008· 5 cited
From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon
Solid-State Electronics·2008· 18 cited
The Role of Implanter Parameters on Implant Damage Generation: an Atomistic Simulation Study
AIP conference proceedings·2008· 1 cited
From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon
European Solid-State Device Research Conference·2008
Comprehensive model of damage accumulation in silicon
Journal of Applied Physics·2008· 22 cited
Atomistic Modeling of Defect Diffusion in SiGe
2007· 1 cited
Current Capabilities and Future Prospects of Atomistic Process Simulation
2007· 1 cited
Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D
2007
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Frequent Co-authors

M. Jaraı́z(23), R. Pinacho(21), Ignacio Martin‐Bragado(19), J. Barbolla(18), J.E. Rubio(17), G. Armelles(13), Lars Samuelson(6), Dan Hessman(6), Mats‐Erik Pistol(5), F. Briones(5), W. Seifert(4), Lourdes Pelaz(4), K. R. C. Mok(4), Madhavi Srinivasan(4), A. Ruiz(4), Noel A. Clark(3), M.-E. Pistol(3), Craig Pryor(3), George H. Gilmer(3), J. A. Prieto(3)