J. Barbolla

Universidad de Valladolid — Spain

Engineering · Physical Sciences

26h-index2.6kcitations154works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Silicon and Solar Cell Technologies(82), Semiconductor materials and devices(78), Semiconductor materials and interfaces(59), Integrated Circuits and Semiconductor Failure Analysis(42), Ion-surface interactions and analysis(32)

Publications154 total

DISORDERED STRUCTURE AND DENSITY OF GAP STATES IN HIGH-PERMITTIVITY THIN SOLID FILMS
Kluwer Academic Publishers eBooks·2006· 2 cited
A 32-mW 320-MHz Continuous-Time Complex Delta-Sigma ADC for Multi-Mode Wireless-LAN Receivers
IEEE Journal of Solid-State Circuits·2006· 94 cited
Physically based modeling of dislocation loops in ion implantation processing in silicon
Materials Science and Engineering B·2005· 8 cited
Atomistic simulations in Si processing: Bridging the gap between atoms and experiments
Materials Science and Engineering B·2005· 9 cited
Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations
Materials Science and Engineering B·2005· 6 cited
Molecular dynamics characterization of as-implanted damage in silicon
Materials Science and Engineering B·2005· 16 cited
Amorphous layer depth dependence on implant parameters during Si self-implantation
Materials Science and Engineering B·2005· 4 cited
Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth
Materials Science and Engineering B·2005· 9 cited
Morphology of as-implanted damage in silicon: a molecular dynamics study
2005
Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions
2005
Study of the amorphous phase of silicon using molecular dynamics simulation techniques
2005· 1 cited
Boron redistribution in pre-amorphized Si during thermal annealing
2005
Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon
2005Open Access
Atomistic analysis of annealing behavior of amorphous regions
2005· 2 cited
Electrical characterization of atomic-layer-deposited hafnium silicate for alternative gate dielectric application
2005· 2 cited
Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators
Journal of Applied Physics·2005· 14 cited
Atomistic modeling of ion beam induced amorphization in silicon
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2005· 2 cited
Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population
Journal of Applied Physics·2005· 26 cited
Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon
Physical Review B·2005· 30 cited
<title>A dual-mode complex ΔΣ ADC in CMOS for wireless-LAN receivers</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2005
page 1 of 8Next →

Frequent Co-authors

M. Jaraı́z(20), Lourdes Pelaz(18), Luis A. Marqués(15), George H. Gilmer(9), R. Pinacho(9), P. Castrillo(9), Ignacio Martin‐Bragado(9), S. Dueñas(9), Marı́a Aboy(9), J.E. Rubio(9), Lourdes Enríquez(8), L. Bailón(7), J. Arias(5), Helena Castán(5), L. Quintanilla(4), Pedro López(4), J. Vicente(4), H.-J. Gossmann(3), C.S. Rafferty(3), V. Boccuzzi(3)