L. Bailón

Universidad de Valladolid — Spain

Engineering · Physical Sciences

16h-index702citations76works0.02yr avg
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Research Topics

Semiconductor materials and devices(47), Silicon and Solar Cell Technologies(25), Semiconductor materials and interfaces(21), Advancements in Semiconductor Devices and Circuit Design(20), Integrated Circuits and Semiconductor Failure Analysis(19)

Publications76 total

A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications
Journal of Applied Physics·2015· 10 cited
Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition
Thin Solid Films·2015· 1 cited
Charge and current hysteresis in dysprosium-doped zirconium oxide thin films
Microelectronic Engineering·2015· 3 cited
Electrical characterization of MIS capacitors based on Dy<inf>2</inf>O<inf>3</inf>-doped ZrO<inf>2</inf> dielectrics
2015
Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications
Applied Physics Letters·2015· 17 citedOpen Access
Resistive Switching Behavior and Electrical Properties of TiO<sub>2</sub>:Ho<sub>2</sub>O<sub>3</sub> and HoTiO<sub>x</sub> Based MIM Capacitors
MRS Proceedings·2014· 1 cited
Influence of growth and annealing temperatures on the electrical properties of Nb<sub>2</sub>O<sub>5</sub>-based MIM capacitors
Semiconductor Science and Technology·2013· 15 cited
2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon
Thin Solid Films·2013· 9 cited
Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes
2013
Photocurrent measurements for solar cells characterization
2013· 1 cited
The role of defects in solar cells: Control and detection defects in solar cells
2013· 15 cited
Deep level defects on mono-like and polycrystalline silicon solar cells
2013· 1 cited
Experimental verification of intermediate band formation on titanium-implanted silicon
Journal of Applied Physics·2013· 38 citedOpen Access
A study of tunneling assisted charge exchange on the inner interface of high-k dielectric stacks
2011
Negative-resistance effect in Al&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; based and nanolaminated MIS structures
2011
Characterization of SrTiO&lt;inf&gt;3&lt;/inf&gt;-based MIM capacitors grown by using different precursors and growth temperatures
2011
Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O3 and nanolaminated films deposited on p-Si
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2011· 16 cited
Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3-based metal-insulator-metal capacitors grown by atomic layer deposition
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2011· 8 cited
Electrical characterization of high-pressure reactive sputtered ScOx films on silicon
Thin Solid Films·2010· 3 cited
Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks
Journal of Applied Physics·2010· 24 citedOpen Access
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Frequent Co-authors

S. Dueñas(28), Helena Castán(27), J. Barbolla(23), H. García(22), M. Jaraı́z(13), Kaupo Kukli(12), A. Gómez(10), Mikko Ritala(10), Markku Leskelä(10), J. Arias(8), G. González-Dı́az(6), J. Vicente(6), Lourdes Pelaz(6), J.M. Hernández-Mangas(5), E. Pérez(5), Jaan Aarik(4), E. Rubio(4), M. Toledano-Luque(4), Lourdes Enríquez(4), A. de Dios(4)