D. G. Lishan

Mrag Americas (United States) — United States

Engineering · Physical Sciences

11h-index414citations32works0.02yr avg
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Research Topics

Semiconductor materials and devices(15), Semiconductor Quantum Structures and Devices(9), Advancements in Semiconductor Devices and Circuit Design(5), Semiconductor Lasers and Optical Devices(5), Integrated Circuits and Semiconductor Failure Analysis(5)

Publications32 total

Wafer Dicing Using Dry Etching on Standard Tapes and Frames
IMAPSource Proceedings·2014· 10 cited
The Formation Of Strain-induced Quantum Well Wires By Low Damage Chemical Dry Etching
2005
Smooth, anisotropic etching of indium containing structures using a high density ICP system
2003· 1 cited
Frontside etching in GaAs/AlGaAs devices
III-Vs Review·2002
Effects of Hydrogen on Chlorine Radical‐Beam Ion‐Beam Etching of Al x Ga1 − x As with Varying Mole Fraction
Journal of The Electrochemical Society·1993· 3 cited
Calibration of the multiple quantum well probe technique for dry-etch-induced damage analysis
Applied Physics Letters·1993· 4 cited
HCl, H2, and Cl2 radical-beam ion-beam etching of Al<i>x</i>Ga1−<i>x</i>As substrates with varying Al mole fraction
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1992· 2 cited
Optical study of strained quantum well wires
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1992· 1 cited
Excitons in strain-induced quantum-well wires and dots
Quantum Electronics and Laser Science Conference·1992
Detection of residual photoresist with the atomic force microscope
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1992· 9 cited
Characterization of Thermal and Photo-Enhanced Remote Plasma Etching of Gallium Arsenide and Indium Phosphide
PhDT·1992
<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> device electrical parameter adjustment and monitoring during remote plasma dry etching
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1991
Strain-induced lateral confinement of excitons in GaAs/AlGaAs quantum well by chemical dry etching
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1991· 6 cited
Systematic observation of strain-induced lateral quantum confinement in GaAs quantum well wires prepared by chemical dry etching
Applied Physics Letters·1991· 28 cited
<i>In</i> <i>situ</i> technique for measurement and control of transistor characteristics during remote plasma etching
Applied Physics Letters·1991
High-frequency electrooptic Fabry-Perot modulators
IEEE Photonics Technology Letters·1991· 16 cited
Chlorine and HCl radical beam etching of III–V semiconductors
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena·1990· 25 cited
Cl2 and HCl radical beam etching of GaAs and InP
Applied Physics Letters·1990· 43 cited
Remote plasma etching of InP in Cl&lt;sub&gt;2&lt;/sub&gt; and HCl
International Conference on Indium Phosphide and Related Materials·1990
Dry etch induced damage in GaAs investigated using Raman scattering spectroscopy
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena·1989· 40 cited
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Frequent Co-authors

Evelyn L. Hu(13), Richard P. Mirin(5), George S. Hammond(5), Takashi Yasuda(4), John E. Bowers(4), Jack E. Leonard(4), D. L. Green(3), J. L. Merz(3), L.A. Coldren(3), V. Jayaraman(3), K. V. Reddy(3), Craig Prater(3), I.-H. Tan(3), J.A. Skidmore(3), Hon Fai Wong(2), P. M. Petroff(2), R. J. Simes(2), Ran Yan(2), E. L. Hu(2), I-Hsing Tan(2)