I.-H. Tan

Petronas (Malaysia) — Malaysia

Physics and Astronomy · Physical Sciences

11h-index1.6kcitations33works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor Quantum Structures and Devices(21), Semiconductor Lasers and Optical Devices(12), Photonic and Optical Devices(10), Semiconductor materials and devices(7), GaN-based semiconductor devices and materials(5)

Publications33 total

Clay Mineral Transformation in the Baram Delta and its Role in the Preservation of Overpressures
2024
A Non-Oxide 850 nm VCSEL for High-Speed Datacom Applications
2007· 1 cited
High quantum efficiency and narrow detection bandwidth of a resonant In/sub 0.53/Ga/sub 0.47/As photodector using the wafer fusing
2005
The Formation Of Strain-induced Quantum Well Wires By Low Damage Chemical Dry Etching
2005
High speed digital and analog receivers
2002
High-efficiency, dual-wavelength, wafer-fused resonant-cavity photodetector operating at long wavelengths
2002
Resonant-cavity avalanche photodiodes and narrow spectral response photodiodes
2002· 2 cited
High-performance resonant-cavity photodetectors
2002· 2 cited
<title>High-power truncated-inverted-pyramid (Al<formula><inf><roman>x</roman></inf></formula>Ga<formula><inf><roman>1-x</roman></inf></formula>)<formula><inf><roman>0.5</roman></inf></formula>In<formula><inf><roman>0.5</roman></inf></formula>P light-emitting diodes</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2000· 4 cited
Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers
Journal of Electronic Materials·2000· 25 cited
High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
Applied Physics Letters·1999· 453 cited
<title>High-performance AlGaInP light-emitting diodes</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1997· 4 cited
The Si/Pd ohmic contact to n-GaP based on the solid phase regrowth principle
Journal of Applied Physics·1997· 4 cited
High-brightness AlGaInP light emitting diodes
Proceedings of the IEEE·1997· 68 cited
<title>High-power characteristics of ultrawideband surface-normal photodetectors</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1996
Wafer bonding of 50-mm diameter GaP to AlGaInP-GaP light-emitting diode wafers
Applied Physics Letters·1996· 60 cited
High-finesse resonant-cavity photodetectors with an adjustable resonance frequency
Journal of Lightwave Technology·1996· 33 cited
Si/Pd ohmic contact to <i>n</i> -GaP based on thesolid phase regrowth principle
Electronics Letters·1996· 6 cited
Transferred substrate Schottky-collector heterojunction bipolar transistors: first results and scaling laws for high f/sub max/
IEEE Electron Device Letters·1995· 23 cited
High-efficiency, dual-wavelength, wafer-fused resonant-cavity photodetector operating at long wavelengths
IEEE Photonics Technology Letters·1995· 11 cited
page 1 of 2Next →

Frequent Co-authors

John E. Bowers(14), Evelyn L. Hu(13), F. A. Kish(8), G. E. Höfler(6), S.S. Murtaza(5), K.A. Anselm(5), M.R. Islam(5), R.V. Chelakara(5), Russell D. Dupuis(5), B. G. Streetman(5), Joe C. Campbell(5), Richard P. Mirin(4), Gregory L. Snider(3), M. G. Craford(3), D. A. Vanderwater(3), D.C. DeFevere(3), J. L. Merz(3), D. G. Lishan(3), Michael R. Krames(2), Mari Ochiai-Holcomb(2)