Arnaud Bournel

Centre National de la Recherche Scientifique — France

Engineering · Physical Sciences

28h-index2.3kcitations152works0.52yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(85), Semiconductor materials and devices(73), Quantum and electron transport phenomena(53), Graphene research and applications(37), Silicon Carbide Semiconductor Technologies(29)

Publications152 total

Quenching statistics in Si and Ge SPADs using particle Monte Carlo simulation
ArXiv.org·2025Open Access
Quenching statistics in Si and Ge SPADs using particle Monte Carlo simulation
arXiv (Cornell University)·2025Open Access
Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology
IEEE Transactions on Nuclear Science·2025
Ultra-Fast True Random Number Generator Based on Ill-Posedness Nucleation of Skyrmion Bags in Ferrimagnets
IEEE Electron Device Letters·2024· 2 cited
Material level analytical model of total ionizing dose induced DC characteristics shift for FDSOI IC design
Microelectronics Reliability·2023· 2 cited
Simulation multiéchelle pour la microélectronique sous radiation : du matériau au circuit
SPIRE - Sciences Po Institutional REpository·2023Open Access
TCAD simulation methodology of total ionizing dose effects for PDSOI transistor with a hump characteristic
Solid-State Electronics·2023· 2 cited
Magnon scattering modulated by omnidirectional hopfion motion in antiferromagnets for meta-learning
Science Advances·2023· 32 citedOpen Access
Tcad Simulation Methodology of the Total Ionizing Dose Effects for Pdsoi Transistor with a Hump Characteristic
SSRN Electronic Journal·2023Open Access
Educational project on the design of a demonstrator with automatic pressure measurement
2022 IEEE International Symposium on Circuits and Systems (ISCAS)·2022· 1 cited
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation
Solid-State Electronics·2022· 1 citedOpen Access
3D Ferrimagnetic Device for Multi-Bit Storage and Efficient In-Memory Computing
IEEE Electron Device Letters·2020· 18 cited
Spin-filter induced large magnetoresistance in 2D van der Waals magnetic tunnel junctions
Nanoscale·2020· 67 cited
Full Band Monte Carlo simulation of phonon transfer at interfaces
2020Open Access
Large spin Hall effect and tunneling magnetoresistance in iridium-based magnetic tunnel junctions
Science China Physics Mechanics and Astronomy·2019· 7 cited
Large Tunneling Magnetoresistance in VSe<sub>2</sub>/MoS<sub>2</sub> Magnetic Tunnel Junction
ACS Applied Materials & Interfaces·2019· 95 citedOpen Access
Intrinsic spin Hall conductivity of the semimetals <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoTe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>WTe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>
Physical review. B./Physical review. B·2019· 102 citedOpen Access
Tunneling magnetoresistance enhancement of magnetic tunnel junction through heavy metal layer symmetry
arXiv (Cornell University)·2018Open Access
Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction
arXiv (Cornell University)·2018· 1 citedOpen Access
Educational project on the design of interface circuit for a Pirani pressure sensor
2018· 2 cited
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Frequent Co-authors

Philippe Dollfus(30), Jérôme Saint-Martin(15), Damien Querlioz(13), Việt Hùng Nguyễn(11), Weisheng Zhao(9), S. Galdin‐Retailleau(7), P. Hesto(6), Youguang Zhang(5), Marc Gaillardin(4), V. Aubry-Fortuna(4), C. Chassat(4), Jacques‐Olivier Klein(4), Yue Zhang(4), Jiaqi Zhou(3), Junfeng Qiao(3), G. Hubert(3), Philippe Paillet(3), Karim Huet(3), V. Nam(3), P. Dollfus(3)