C. Chassat

Imperial College London — United Kingdom

Materials Science · Physical Sciences

9h-index522citations17works0.02yr avg
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Research Topics

Graphene research and applications(8), Advancements in Semiconductor Devices and Circuit Design(8), Semiconductor materials and devices(6), Thermal properties of materials(5), Silicon Carbide Semiconductor Technologies(4)

Publications17 total

A rapidly prototyped, simple yet versatile dynamic breathing Exposure-on-a-Chip for investigating nanoparticle deposition in the alveoli
2025Open Access
Graphene nanomesh transistor with high on/off ratio and good saturation behavior
Applied Physics Letters·2013· 44 citedOpen Access
Thermoelectric performance of disordered and nanostructured graphene ribbons using Green’s function method
Journal of Computational Electronics·2012· 39 cited
Nanostructuration of Graphene Nanoribbons for thermoelectric applications
2011· 1 cited
Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons
Physical Review B·2011· 191 citedOpen Access
MONTE CARLO SIMULATION OF GIANT PIEZORESISTANCE EFFECT IN p-TYPE SILICON NANOSTRUCTURES
Modern Physics Letters B·2011· 12 cited
Edge shape effect on vibrational modes in graphene nanoribbons: A numerical study
Journal of Applied Physics·2011· 39 cited
Edge effects on phonon dispersion and density-of-states of graphene nanoribbons and nanoflakes
Chinese Journal of Physics·2011· 2 cited
Phonon and electron transport in graphene nanoribbons
2010· 1 cited
Quantum transport of Dirac fermions in graphene field effect transistors
2010· 16 cited
Giant piezoresistance effect in p-type silicon
2010· 1 cited
Impact of strain on p-DGMOS performance using full-band Monte Carlo simulation
2009
Full band Monte Carlo study of ballistic effects in nanometer‐scaled strained P channel Double Gate MOSFETs
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2007· 7 cited
On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation
IEEE Transactions on Electron Devices·2007· 86 citedOpen Access
Monte Carlo simulation of double gate MOSFET including multi sub-band description
Journal of Computational Electronics·2006· 12 cited
Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas
Semiconductor Science and Technology·2006· 64 citedOpen Access
Influence of Ballistic Effects in Ultra-Small MOSFETs
Journal of Computational Electronics·2004· 7 cited

Frequent Co-authors

Philippe Dollfus(14), Jérôme Saint-Martin(11), Arnaud Bournel(8), Việt Hùng Nguyễn(6), V. Aubry-Fortuna(6), F. Mazzamuto(4), Karim Huet(3), Y. Apertet(2), Charles Caër(2), Damien Querlioz(2), S. Galdin‐Retailleau(2), Florian Monsef(2), P. Dollfus(2), A. Valentin(2), Thi Thu Trang Nghiem(2), Alain Bosseboeuf(2), Salim Berrada(1), A. Alarcón(1), F. Mazzamuto(1), Fulvio Mazzamuto(1)