Fazel Parsapour

École Polytechnique Fédérale de Lausanne — Switzerland

Engineering · Physical Sciences

12h-index971citations24works0.02yr avg
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Research Topics

Acoustic Wave Resonator Technologies(16), GaN-based semiconductor devices and materials(14), Metal and Thin Film Mechanics(7), Quantum Dots Synthesis And Properties(5), Chalcogenide Semiconductor Thin Films(5)

Publications24 total

Impact of negative bias on the piezoelectric properties through the incidence of abnormal oriented grains in Al0.62Sc0.38N thin films
Thin Solid Films·2020· 21 citedOpen Access
Growth, Properties, and Applications of Al<sub>1-x</sub>Sc<sub>x</sub>N Thin Films
2019Open Access
Freestanding and Solidly Mounted Lamb Wave Resonators based on Al0.85Sc0.15N Thin Films
2019
Free standing and solidly mounted Lamb wave resonators based on Al0.85Sc0.15N thin film
Applied Physics Letters·2019· 14 citedOpen Access
Material Parameter Extraction for Complex AlScN Thin Film Using Dual Mode Resonators in Combination with Advanced Microstructural Analysis and Finite Element Modeling
Advanced Electronic Materials·2019· 17 citedOpen Access
Growth, Integration, and Functional Characterization of AlScN Thin Films for RF MEMS Devices
Infoscience (Ecole Polytechnique Fédérale de Lausanne)·2019Open Access
Abnormal Grain Growth in AlScN Thin Films Induced by Complexion Formation at Crystallite Interfaces (Phys. Status Solidi A 2∕2019)
physica status solidi (a)·2019· 5 citedOpen Access
Abnormal Grain Growth in AlScN Thin Films Induced by Complexion Formation at Crystallite Interfaces
physica status solidi (a)·2018· 103 citedOpen Access
Determination of Elastic and Piezoelectric Properties of Al<sub>0.84</sub>Sc<sub>0.16</sub>N Thin Films
2018· 4 citedOpen Access
AlScN and AlN – based hybrid BAW/SAW resonator with enhanced Q-factor and electromechanical coupling
2018
Material constants extraction for AlScN thin films using a dual mode baw resonator
2018· 3 citedOpen Access
Enhanced piezoelectric properties of c-axis textured aluminium scandium nitride thin films with high scandium content: Influence of intrinsic stress and sputtering parameters
2017 IEEE International Ultrasonics Symposium (IUS)·2017· 14 citedOpen Access
Ex-situ AlN seed layer for (0001)-textured Al&lt;inf&gt;0.84&lt;/inf&gt;Sc&lt;inf&gt;0.16&lt;/inf&gt;N thin films grown on SiO&lt;inf&gt;2&lt;/inf&gt; substrates
2017 IEEE International Ultrasonics Symposium (IUS)·2017· 2 citedOpen Access
Effective SAW excitation on non-piezoelectric substrate using AlScN piezoelectric thin film BAW/SAW hybrid transducer
2017 IEEE International Ultrasonics Symposium (IUS)·2017· 12 citedOpen Access
Enhanced piezoelectric properties of c-axis textured aluminium scandium nitride thin films with high scandium content: Influence of intrinsic stress and sputtering parameters
2017 IEEE International Ultrasonics Symposium (IUS)·2017· 19 cited
Properties of AlScN thin films for hybrid BAW/SAW resonator fabrication
2017· 10 cited
Interfacial Electron Transfer in MoS<sub>2</sub> Nanoclusters
MRS Proceedings·1999
Spectroscopy of Eu<sup>3+</sup>-Doped PtS<sub>2</sub> Nanoclusters
The Journal of Physical Chemistry B·1998· 32 cited
Photoluminescence from nanosize gold clusters
The Journal of Chemical Physics·1998· 501 cited
Trap State Dynamics in MoS<sub>2</sub> Nanoclusters
The Journal of Physical Chemistry B·1998· 63 cited
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Frequent Co-authors

Paul Muralt(14), Vladimir Pashchenko(13), David F. Kelley(8), C.S. Sandu(7), Stefan Mertin(7), Pascal Nicolay(6), Bernd Heinz(5), Thomas LaGrange(4), J. P. Wilcoxon(3), Nicolas Kurz(3), Ramin Matloub(2), Oliver Rattunde(2), Gabriel Christmann(2), M.-A. Dubois(2), V. Lebedev(2), Hugo Chambon(2), Ingo Bleyl(2), James E. Martin(1), B. Wiedenman(1), S.A. Craft(1)