Romain Chanson

Commissariat à l'Énergie Atomique et aux Énergies Alternatives — France

Engineering · Physical Sciences

6h-index114citations25works1.02yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(17), Copper Interconnects and Reliability(11), Metal and Thin Film Mechanics(8), Plasma Diagnostics and Applications(6), Advanced ceramic materials synthesis(3)

Publications25 total

Mixed Co-Mn oxide coatings synthetized by DLI-MOCVD for SOC interconnect a parametric study for composition and homogeneity control
Scientific Reports·2025Open Access
Mixed Co-Mn oxide coatings synthetized by DLI-MOCVD for SOC interconnect: parametric study for composition and homogeneity control
2025Open Access
Influence of Cobalt and Cobalt–Manganese Oxide Coating Thickness Deposited by DLI-MOCVD as a Barrier Against Cr Diffusion for SOC Interconnect
High Temperature Corrosion of Materials·2024· 3 citedOpen Access
Use of a Thermally Degradable Chemical Vapor Deposited Polymer Film for Low Damage Plasma Processing of Highly Porous Dielectrics
ACS Applied Electronic Materials·2019· 5 cited
Novel Volatile Film for the Protection of Organo-Silicate Glass Dielectric Materials
IEEE Transactions on Semiconductor Manufacturing·2019· 1 cited
Low-k integration: Gas screening for cryogenic etching and plasma damage mitigation
Frontiers of Chemical Science and Engineering·2019· 5 cited
Etch process cleaning to improve wafer to wafer reproducibility
HAL (Le Centre pour la Communication Scientifique Directe)·2019
Gas Phase Pore Stuffing for the protection of organo-silicate glass dielectric materials
2018· 1 cited
Low damage ultra-low-k patterning using a high boiling point organic (HBPO) combined with NF3
Plasma Research Express·2018· 4 cited
Gas Phase Pore Stuffing for Damage Mitigation during Plasma Etching
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials·2018
Low-k protection from F radicals and VUV photons using a multilayer pore grafting approach
Journal of Physics D Applied Physics·2018· 7 cited
Gas Phase Pore Stuffing (GPPS)
2018· 1 cited
Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C
Scientific Reports·2018· 25 citedOpen Access
Advance in low-k cryogenic etching of porous organoscilicate : Investigation of a new gas with higher boiling point Organic (HBPO) and comparison with C4F8
HAL (Le Centre pour la Communication Scientifique Directe)·2016
Surface chemistry of InP ridge structures etched in Cl2-based plasma analyzed with angular XPS
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2015· 3 citedOpen Access
X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl2-based inductively coupled plasma
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2014· 10 cited
Modeling of InP Etching Under ICP Cl<sub>2</sub>/Ar/N<sub>2</sub> Plasma Mixture: Effect of N<sub>2</sub> on the Etch Anisotropy Evolution
Plasma Processes and Polymers·2012· 10 cited
Modeling of inductively coupled plasma Ar/Cl2/N2 plasma discharge: Effect of N2 on the plasma properties
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2012· 12 cited
A complete simulation of InP etching by Cl2/N2/Ar plasma mixture
Bulletin of the American Physical Society·2012
Global Model of &lt;formula formulatype="inline"&gt;&lt;tex Notation="TeX"&gt;$\hbox{Cl}_{2}\hbox{/Ar}$&lt;/tex&gt; &lt;/formula&gt; High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP
IEEE Transactions on Plasma Science·2012· 17 cited
page 1 of 2Next →

Frequent Co-authors

A. Rhallabi(10), Jean‐François de Marneffe(9), Christophe Cardinaud(9), Marie Claude Fernandez(5), S. Bouchoule(5), M. Fujikawa(5), S. Nozawa(5), Askar Rezvanov(4), Tatsuya Yamaguchi(4), Thomas Tillocher(3), Rémi Dussart(3), Jean-Pierre Landesman(3), S. Guilet(3), Kaoru Maekawa(3), F. Miserque(3), Fabien Rouillard(3), Frédéric Schuster(3), Khashayar Babaei Gavan(3), Philippe Lefaucheux(2), L. Gatilova(2)