A. A. Buell

RTX (United States) — United States

Engineering · Physical Sciences

8h-index204citations12works0.02yr avg
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Research Topics

Advanced Semiconductor Detectors and Materials(11), Chalcogenide Semiconductor Thin Films(8), Semiconductor Quantum Structures and Devices(5), Infrared Target Detection Methodologies(4), Spectroscopy and Laser Applications(2)

Publications12 total

Flexibility of p–n Junction Formation from SWIR to LWIR Using MBE-Grown Hg(1–x)Cd x Te on Si Substrates
Journal of Electronic Materials·2009· 8 cited
High-Performance LWIR MBE-Grown HgCdTe/Si Focal Plane Arrays
Journal of Electronic Materials·2007· 19 cited
Thin film transmission matrix approach to fourier transform infrared analysis of HgCdTe multilayer heterostructures
Journal of Electronic Materials·2006· 7 cited
Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy
Journal of Electronic Materials·2005· 14 cited
Status of HgCdTe/Si technology for large format infrared focal plane arrays
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2005· 7 cited
Wide-FOV FPAs for a shipboard distributed aperture system
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2004· 11 cited
Physical structure of molecular-beam epitaxy growth defects in HgCdTe and their impact on two-color detector performance
Journal of Electronic Materials·2004· 15 cited
HgCdTe/Si materials for long wavelength infrared detectors
Journal of Electronic Materials·2004· 36 cited
Performance of molecular-beam epitaxy-grown midwave infrared HgCdTe detectors on four-inch Si substrates and the impact of defects
Journal of Electronic Materials·2003· 37 cited
Developments in the fabrication and performance of high-quality HgCdTe detectors grown on 4-in. Si substrates
Journal of Electronic Materials·2002· 17 cited
Advances in HgCdTe-based infrared detector materials: the role of molecular-beam epitaxy
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2001· 3 cited
MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays
Journal of Electronic Materials·2001· 30 cited

Frequent Co-authors

S. M. Johnson(12), M. F. Vilela(8), W. A. Radford(8), R. E. Bornfreund(7), Michael Newton(7), J. B. Varesi(6), Jeffrey M. Peterson(6), J. Eric Jensen(6), G. M. Venzor(5), T. J. de Lyon(4), A. C. Childs(4), D. D. Lofgreen(4), E. P. Smith(3), K. D. Maranowski(3), J. P. Rosbeck(2), L. T. Pham(2), J. A. Roth(2), J. J. Franklin(2), V. Nathan(1), Yen N. Thai(1)