J. B. Varesi

United States Department of the Army — United States

Engineering · Physical Sciences

18h-index1.3kcitations45works0.02yr avg
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Research Topics

Advanced Semiconductor Detectors and Materials(25), Chalcogenide Semiconductor Thin Films(8), Thermography and Photoacoustic Techniques(8), Infrared Target Detection Methodologies(8), Force Microscopy Techniques and Applications(7)

Publications45 total

Helium-Plasma-Prepared (111)A HgCdTe and (211)B InSb
Journal of Electronic Materials·2007· 3 cited
Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe
Journal of Electronic Materials·2007· 15 cited
Investigation of HgCdTe surface films and their removal
Journal of Electronic Materials·2006· 8 cited
Fabrication and characterization of two-color midwavelength/long wavelength HgCdTe infrared detectors
Journal of Electronic Materials·2006· 43 cited
Examination of the effects of high-density plasmas on the surface of HgCdTe
Journal of Electronic Materials·2006· 16 cited
Surface structure of (111)A HgCdTe
Journal of Electronic Materials·2006· 8 cited
Threading dislocation removal from the near-surface region of epitaxial cadmium telluride on silicon by lithographic patterning of the substrate
Journal of Electronic Materials·2005· 1 cited
A langmuir probe investigation of electron cyclotron resonance argon-hydrogen plasmas
Journal of Electronic Materials·2005· 15 cited
Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication
Journal of Electronic Materials·2005· 12 cited
Surface structure of plasma-etched (211)B HgCdTe
Journal of Electronic Materials·2005· 7 cited
Investigation of HgCdTe surface quality following Br-based etching for device fabrication using spectroscopic ellipsometry
Journal of Electronic Materials·2005· 5 cited
Physical structure of molecular-beam epitaxy growth defects in HgCdTe and their impact on two-color detector performance
Journal of Electronic Materials·2004· 15 cited
Determination of the ion angular distribution for electron cyclotron resonance, plasma-etched HgCdTe trenches
Journal of Electronic Materials·2004· 12 cited
HgCdTe/Si materials for long wavelength infrared detectors
Journal of Electronic Materials·2004· 36 cited
Macro-loading effects of electron-cyclotron resonance etched II–VI materials
Journal of Electronic Materials·2004· 9 cited
Lithography factors that determine the aspect ratio of electron cyclotron resonance plasma etched HgCdTe trenches
Journal of Electronic Materials·2003· 14 cited
The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe
Journal of Electronic Materials·2003· 30 cited
Performance of molecular-beam epitaxy-grown midwave infrared HgCdTe detectors on four-inch Si substrates and the impact of defects
Journal of Electronic Materials·2003· 37 cited
Low-energy electron-enhanced etching of HgCdTe
Journal of Electronic Materials·2003· 7 cited
Scalability of dry-etch processing for small unit-cell HgCdTe focal-plane arrays
Journal of Electronic Materials·2003· 16 cited
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Frequent Co-authors

S. M. Johnson(18), J. D. Benson(15), Arun Majumdar(14), W. A. Radford(14), A. J. Stoltz(14), M. Martinka(10), J. H. Dinan(10), P. R. Boyd(8), L. A. Almeida(8), P.R. Norton(6), T. Perazzo(6), R. E. Bornfreund(6), J. Eric Jensen(6), E. P. Smith(6), A. A. Buell(6), A. W. Kaleczyc(6), M. Y. Mao(5), Jeffrey M. Peterson(5), G. M. Venzor(5), Ohmyoung Kwon(4)