M. Schröter

Analog Devices (United States) — United States

Engineering · Physical Sciences

36h-index5.7kcitations347works1.42yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(177), Radio Frequency Integrated Circuit Design(156), Semiconductor materials and devices(67), Semiconductor Quantum Structures and Devices(51), Silicon Carbide Semiconductor Technologies(44)

Publications345 total

Compact Modeling of Distributed Electro-Thermal Effects in SiGe HBTs and mm-Wave Power Amplifiers
2025
Verification of Compact Model Nonlinearity Using an H-Band Frequency Quadrupler Fabricated in SG13G3Cu Technology
2025
Long-Term RF Reliability of SiGe HBTs: Characterization and Modeling: Invited Paper
2025
Investigation and Compact Modeling of Self-Heating in Buried Gate Carbon Nanotube Field-Effect Transistors
2025
A 6–32.5 GHz Gain-Enhanced and Harmonically Tuned Class-E SiGe Cascode Power Amplifier with 19.2 dBm Peak $\mathrm{P}_{\text {SAT }}$ and 34% Peak PAE
2025
Test-Fixture Design Flow for Broadband Validation of CMOS Device Models up to (sub)mm-Waves
IEEE Transactions on Microwave Theory and Techniques·2025
Recent Topics in HBT Compact Modeling for RF Applications
2025
Analysis of Multivalley Phenomena in InP/GaAsSb DHBTs Using the Boltzmann Transport Equation
IEEE Transactions on Electron Devices·2025
A 232–282 GHz Frequency Quadrupler in 130-nm SiGe HBT SG13G3Cu Technology
IEEE Microwave and Wireless Technology Letters·2025· 1 cited
Max Eitingon e a luta para estabelecer um padrão internacional de formação psicanalítica (1925-1929)
Jornal de Psicanálise.·2025Open Access
On the Emitter Back-Injection Current in Advanced SiGe HBTs at Cryogenic Temperatures
2024· 4 cited
A 7.7-mW DC-to-62 GHz Ultra-Wideband Low-Noise Amplifier with ±2.1 ps Group Delay Variation and 3.3 dB NF in 0.13-μm SiGe:C BiCMOS
2024· 1 cited
A Novel Approach to Zero Ω Transmission Line Analysis and Design at W-Band and Beyond
2024· 1 cited
On the Safe Operating Area of InP HBTs
2024· 1 cited
Indium-Phosphide Transistors: A Review of Current State and Suitability for Commercial > 100-GHz Wireless Communication Systems
IEEE Microwave Magazine·2024· 6 cited
Einige Richtigstellungen zu dem Essay von Wolfgang Martynkewicz über mein Buch zur Geschichte der Psychoanalyse in Deutschland
PSYCHE·2024
Record 35% Power-Added Efficiency at 170 GHz in 300-nm InP/GaAsSb DHBTs
IEEE Microwave and Wireless Technology Letters·2024· 5 citedOpen Access
A Low-Power W-Band SiGe-HBT Double-Balanced Up-Conversion Mixer With an Integrated Second-Order IF Low-Pass Filter
IEEE Microwave and Wireless Technology Letters·2024· 6 citedOpen Access
Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications
IEEE Transactions on Device and Materials Reliability·2023· 8 cited
Validation of Thermometer-Based Techniques to Experimentally Extract the Impact of Nonlinear Thermal Effects on the Thermal Resistance of Bipolar Transistors
Lecture notes in electrical engineering·2023
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Frequent Co-authors

Martin Claus(8), H.-M. Rein(7), Norbert Elias(6), P. Sakalas(5), B. Heinemann(4), Sven Mothes(4), D. Marchesan(3), P. Chevalier(3), D.R. Pehlke(3), Christoph Jungemann(3), D.J. Walkey(3), Sorin P. Voinigescu(2), J. Böck(2), A. Mukherjee(2), Anjan Chakravorty(2), Andreas Pawlak(2), Gerald Wedel(2), M. Haferlach(2), M. Jamal Deen(2), A. Koldehoff(2)