P. Sakalas

Baltic Institute of Advanced Technology — LT

Engineering · Physical Sciences

16h-index1.0kcitations119works0.02yr avg
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Research Topics

Radio Frequency Integrated Circuit Design(86), Advancements in Semiconductor Devices and Circuit Design(49), Semiconductor Quantum Structures and Devices(34), Semiconductor materials and devices(21), Microwave Engineering and Waveguides(19)

Publications119 total

A 6–32.5 GHz Gain-Enhanced and Harmonically Tuned Class-E SiGe Cascode Power Amplifier with 19.2 dBm Peak $\mathrm{P}_{\text {SAT }}$ and 34% Peak PAE
2025
Harmonic Distortion Peculiarities of High-Frequency SiGe HBT Power Cells for Radar Front End and Wireless Communication
Electronics·2025Open Access
A 1.8 GHz to 43 GHz Low Noise Amplifier with 4 dB noise figure in 0.1 µm GaAs Technology
2022· 3 cited
Design of TR Module Components for Ultra-Wideband Arrays up to Ka Band and Beyond
2022 IEEE International Symposium on Phased Array Systems & Technology (PAST)·2022
Verification of Wafer-Level Calibration Accuracy at Cryogenic Temperatures
River Publishers eBooks·2022
A 5.9 mW E-/W-Band SiGe-HBT LNA With 48 GHz 3-dB Bandwidth and 4.5-dB Noise Figure
IEEE Microwave and Wireless Components Letters·2022· 19 cited
An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTs
2021· 8 cited
X- and K<sub>u</sub>-Band SiGe-HBT Voltage-Controlled Ring Oscillators for Cryogenic Applications
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits·2021· 6 citedOpen Access
Advanced SiGe:C HBTs at Cryogenic Temperatures and Their Compact Modeling With Temperature Scaling
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits·2021· 22 citedOpen Access
Design and measurements of a 28 GHz High-Linearity LNA in 45nm SOI-CMOS
2021 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS)·2021· 5 cited
Bias-Dependent Intrinsic RF Thermal Noise Modeling and Characterization of Single-Layer Graphene FETs
IEEE Transactions on Microwave Theory and Techniques·2021· 1 citedOpen Access
Bias-dependent intrinsic RF thermal noise modeling and characterization of single layer graphene FETs
arXiv (Cornell University)·2021· 9 citedOpen Access
LO Chain (×12) Integrated 190-GHz Low-Power SiGe Receiver With 49-dB Conversion Gain and 171-mW DC Power Consumption
IEEE Transactions on Microwave Theory and Techniques·2021· 8 cited
SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems
IEEE Journal of Microwaves·2021· 77 citedOpen Access
Design of a wideband, 4 – 42.5 GHz Low Noise Amplifier in 0.25 µm GaAs pHEMT Technology
2020· 7 cited
3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation
IEEE Journal of Solid-State Circuits·2020· 35 cited
82 GHz direct up-converter mixer using double-balanced Gilbert cell with sensitivity analysis at mm-wave frequency
2019· 3 cited
Distortion Analysis of CE and CB SiGe HBT Power-Cells with f<sub>max</sub> beyond 220 GHz for Millimeter-Wave Applications
2019· 6 cited
Noise and Linearity of High-Speed SiGe HBT Cells in CE and CB Configuration
Infoscience (Ecole Polytechnique Fédérale de Lausanne)·2019· 1 citedOpen Access
W-band low-power millimeter-wave direct down converter using SiGe HBTs in saturation region
2019· 1 cited
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Frequent Co-authors

M. Schröter(29), A. Matulionis(10), A. Mukherjee(7), J. Liberis(7), Martin Claus(6), V. Bareikis(5), Herbert Zirath(5), M. Haferlach(4), Yaxin Zhang(4), Xiaodi Jin(4), J. Herricht(4), M. Ramonas(4), Tobias Nardmann(4), Andreas Pawlak(4), Wenfeng Liang(3), Andrej Rumiantsev(3), Aníbal Pacheco-Sánchez(2), Sven Mothes(2), Angelos Antonopoulos(2), Matthias Bucher(2)